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參數(shù)資料
| 型號： | CPH5612 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | N-Channel Silicon MOSFET General-Purpose Switching Device |
| 中文描述： | N溝道MOSFET的硅通用開關(guān)設(shè)備 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 50K |
| 代理商： | CPH5612 |
CPH5612
No.8180-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11205PE TS IM TB-00001087
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
CPH5612
Features
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
Composite type with 2 MOSFETs contained in a single package, facilitaing-density mounting.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
Ratings
Unit
V
V
A
A
W
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
100
±
10
1
4
PW
≤
10
μ
s, duty cycle
≤
1%
Mounted on a ceramic board (600mm
2
0.8mm) 1unit
0.9
150
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=1mA, VGS=0
VDS=100V, VGS=0
VGS=
±
8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=500mA
ID=500mA, VGS=4V
ID=500mA, VGS=2.5V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
100
V
μ
A
μ
A
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
1
±
10
1.3
0.4
1.8
2.6
430
450
350
20
12
15
11
54
30
570
650
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : FS
Continued on next page.
Ordering number : ENN8180
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CPH5614 | N-Channel Silicon MOSFET General-Purpose Switching Device |
| CPH5616 | N-Channel Silicon MOSFET General-Purpose Switching Device |
| CPH5801 | DC/DC Converter Applications |
| CPH5804 | CPH5804 |
| CPH5805 | DC / DC Converter Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CPH5612-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH100V 1A CPH5 |
| CPH5614 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device |
| CPH5616 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device |
| CPH5616-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET NN CH 60V 1.7A SOT346 |
| CPH5617 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
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