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參數(shù)資料
| 型號： | CPH5517 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | PNP / NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications |
| 中文描述： | 進(jìn)步黨/瑞展硅晶體管大電流開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 59K |
| 代理商： | CPH5517 |
CPH5517
No.8205-1/5
Applications
relay drivers, lamp drivers, motor drivers.
Features
Composite type with a PNP/NPN transistor contained in package, facilitating high-density mounting.
The CPH5517 consists of two chips which are equivalent to the CPH3116 and the CPH3216, respectively.
Ultrasmall package permitting applied sets to be small and slime (mounting height : 0.9mm).
Specifications
( ) : PNP
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
Ratings
Unit
V
V
V
A
A
mA
W
°
C
°
C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
(--50)60
(--)50
(--)5
(--)1.0
(--)3
(--)200
Mounted on a ceramic board (600mm
2
0.8mm) 1unit
0.9
150
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
(--)0.1
(--)0.1
560
Unit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwideth Product
Output Capacitance
Marking : EM
ICBO
IEBO
hFE
fT
Cob
VCB=(--)40V, IE=0
VEB=(--)4V, IC=0
VCE=(--)2V, IC=(--)100mA
VCE=(--)10V, IC=(--)300mA
VCB=(--)10V, f=1MHz
μ
A
μ
A
200
420
(9)6
MHz
pF
Continued on next page.
Ordering number : ENN8205
21505 TS IM TB-00001151
CPH5517
PNP / NPN Epitaxial Planar Silicon Transistor
High-Current Switching Applications
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CPH5517-TL-E | 功能描述:兩極晶體管 - BJT BIP PNP+NPN 1A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CPH5518 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications |
| CPH5518-TL-E | 功能描述:兩極晶體管 - BJT BIP PNP+NPN 1A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CPH5518-TL-H | 功能描述:兩極晶體管 - BJT BIP PNP+NPN 1A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CPH5519-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR NPNPNP SOT346 |
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