參數(shù)資料
型號(hào)： CPH3326
廠商： Sanyo Electric Co.,Ltd.
英文描述： P-Channel Silicon MOSFET General-Purpose Switching Device
中文描述： P溝道MOSFET的硅通用開關(guān)設(shè)備
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 48K
代理商： CPH3326
CPH3326
No.7913-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
93004 TS IM TA-100225
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
CPH3326
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
Ratings
Unit
V
V
A
A
W
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
--100
±
20
--0.5
PW
≤
10
μ
s, duty cycle
≤
1%
Mounted on a ceramic board (900mm
2
0.8mm)
--2
1
150
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=--1mA, VGS=0
VDS=--100V, VGS=0
VGS=
±
16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--250mA
ID=--250mA, VGS=--10V
ID=--250mA, VGS=--4V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
--100
V
μ
A
μ
A
V
S
pF
pF
pF
ns
ns
ns
ns
--1
±
10
--2.6
--1.2
0.4
0.8
1.55
1.8
165
11
9.0
2.0
2.5
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : YB
7
3.3
32
15
Continued on next page.
Ordering number : ENN7913
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CPH3327 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications
CPH3327-TL-E 功能描述:MOSFET P-CH 100V 0.6A CPH3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
CPH3331 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device
CPH3331-TL-E 制造商:SANYO 功能描述:Pch -200V -0.4A 5.0m@10V 3CPH Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 200V 0.4A CPH3 制造商:Sanyo 功能描述:0
CPH3337 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
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