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參數(shù)資料
| 型號： | CNZ1414A |
| 廠商： | PANASONIC CORP |
| 元件分類： | 開關(guān) |
| 英文描述： | Integrated Photosensor |
| 中文描述： | 1.2 mm SLOT WIDTH, 1 CHANNEL SLOTTED OPTICAL SWITCH LOGIC OUTPUT |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 53K |
| 代理商： | CNZ1414A |
1
Integrated Photosensors
CNZ1414A
Integrated Photosensor
Features
Ultraminiature : 4.2
×
4.2 mm (height : 5.2 mm)
Low voltage operation, low current consumption
(V
CC
= 2.2 to 7 V, I
CCL
=0.8 mA typ.)
Fast response : t
PHL
= 3
μ
s, t
PLH
= 8
μ
s (typ.)
Highly precise position detection (slit width : 0.3 mm)
Gap width : 1.2 mm
With attachment positioning pin
SEC. A-A'
A
A'
*3.2
*2-1.27
1
2
3
4
5
3-0.5
2-0.25
4.2
±
0.1
1.2
0.5
(R0.1)
+0.15
–0
4.2
3.0
±
0.05
(2-C0.3)
(0.3)
3
(
5
4
(
Device
center
N
2-0.8
±
0.05
Gate the rest
0.3 max.
1: Anode 4: V
2: Cathode 5: GND
3: V
CC
Unit : mm
(2-C0.3)
(Note)
1. Tolerance unless otherwise specified is
±
0.2
2. ( ) Dimension is reference
3. * is dimension at the root of leads
4. Burrs should be less than 0.15mm
Pin Connection
Const. Voltage Cir.
CNZ1414A
(Normally ON type)
3 V
CC
4 V
O
5 GND
Anode 1
Cathode 2
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Output current
Output voltage
Supply voltage
Power dissipation
Operating ambient temperature
Storage temperature
Symbol
Ratings
V
R
I
F
P
D*1
I
O
V
O
V
CC
P
C*2
T
opr
–25 to +85
T
stg
– 40 to +100
Unit
V
mA
mW
mA
V
V
mW
C
C
Input (Light
emitting diode)
6
50
75
8
12
7
80
Output
(Photo IC)
Temperature
*1
Input power derating ratio is 1.0 mW/C at Ta
≥
25C.
*2
Output power derating ratio is 1.07 mW/C at Ta
≥
25C.
Overview
CNZ1414A is ultraminiature, highly reliable transmissive
photosensor that has a high efficiency GaAs infrared light emitting
diode chip and a low voltage operation type high sensitivity Si-
integrated-photodetector chip wich are in a double molded resin
package.
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