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參數(shù)資料
| 型號： | CNZ1179 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 開關(guān) |
| 英文描述： | Photo Interrupter |
| 中文描述： | 5 mm SLOT WIDTH, 1 CHANNEL SLOTTED OPTICAL SWITCH TRANSISTOR OUTPUT |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 48K |
| 代理商： | CNZ1179 |
1
Transmissive Photosensors (Photo Interrupters)
CNZ1179
Photo Interrupter
*9.75
±
0.3
*2.54
±
0.3
Mark for indicating
LED side
13.0
±
0.3
5.0
±
0.2
2-R0.5
6.2
±
0.2
0.45
±
0.1
2
±
0
1
±
0
7
2
±
0
7
±
0
2-0.45
2
3
1
4
Pin connection
Unit : mm
2
3
1
4
(Note) * is dimension at the root of leads
(Input pulse)
(Output pulse)
50
R
L
t
d
: Delay time
t
r
: Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
V
CC
Sig.OUT
10%
90%
Sig.IN
t
d
t
r
t
f
For contactless SW, object detection
Features
Highly precise position detection : 0.3 mm
Wide gap between emitting and detecting elements, suitable for
thick plate detection
Fast response : t
r
, t
f
= 6
μ
s (typ.)
Small output current variation against change in temperature
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Collector current
Symbol
Ratings
V
R
I
F
P
D*1
I
C
V
CEO
V
ECO
P
C*2
T
opr
–25 to +85
T
stg
–30 to +100
Unit
V
mA
mW
mA
V
V
mW
C
C
Input (Light
emitting diode)
3
50
75
20
30
5
100
Output (Photo
Collector to emitter voltage
transistor)
Emitter to collector voltage
Collector power dissipation
Operating ambient temperature
Storage temperature
Temperature
Electrical Characteristics
(Ta = 25C)
Parameter
Forward voltage (DC)
characteristics
Reverse current (DC)
Collector cutoff current
characteristics
Collector to emitter capacitance
Collector current
Response time
Symbol
V
F
I
R
I
CEO
C
C
I
C
t
r
, t
f*
Conditions
min
typ
1.2
max
1.5
10
200
Unit
V
μ
A
nA
pF
mA
μ
s
V
Input
I
F
= 50mA
V
R
= 3V
V
CE
= 10V
V
CE
= 10V, f = 1MHz
V
CE
= 10V, I
F
= 20mA, R
L
= 100
V
CC
= 10V, I
C
= 1mA, R
L
= 100
Output
5
Transfer
characteristics
0.3
6
Collector to emitter saturation voltage
V
CE(sat)
I
F
= 50mA, I
C
= 0.1mA
*
Switching time measurement circuit
0.3
*1
Input power derating ratio is
1.0 mW/C at Ta
≥
25C.
*2
Output power derating ratio is
1.33 mW/C at Ta
≥
25C.
Overview
CNZ1179 is a photocoupler in which a high efficiency GaAs
infrared light emitting diode is used as the light emitting element,
and a high sensitivity phototransistor is used as the light detecting
element. The two elements are arranged so as to face each other,
and objects passing between them are detected.
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