參數(shù)資料
型號(hào): CNY21EXI
英文描述: NPN-OUTPUT DC-INPUT OPTOCOUPLER
中文描述: npn型輸出DC -輸入光耦合器
文件頁數(shù): 2/10頁
文件大?。?/td> 92K
代理商: CNY21EXI
CNY21N
TELEFUNKEN Semiconductors
Rev. A1, 11-Jun-96
2 (10)
Features
According to VDE 0884
Rated impulse voltage (transient overvoltage)
V
IOTM
= 8 kV peak
Isolation test voltage (partial discharge test voltage)
V
pd
= 2.8 kV peak
Rated isolation voltage (RMS includes DC)
V
IOWM
= 1000 V
RMS
(1450 V peak)
Rated recurring peak voltage (repetitive)
V
IORM
= 1000 V
RMS
Creeping current resistance according to
VDE 0303/IEC 112
C
omparative
T
racking
I
ndex:
CTI
= 275
Thickness through insulation > 3 mm
Isolation materials according to UL 94
Pollution degree 2 (DIN/VDE 0110)
Climatic classification 55/085/21 (IEC 68 part 1)
Further approvals: BS 415, BS 7002, SETI: IEC 950,
UL 1577: File no: E 76222
Special construction: therefore extra low coupling
capacity of typical 0.3 pF, high
C
ommon
M
ode
R
ejection
Low temperature coefficient of CTR
C
urrent
T
ransfer
R
atio (CTR) of typical 60%
Absolute Maximum Ratings
Input (Emitter)
Parameters
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
Test Conditions
Symbol
V
R
I
F
I
FSM
P
tot
T
j
Value
5
50
1.5
120
100
Unit
V
mA
A
mW
°
C
t
p
10 s
T
amb
25
°
C
Output (Detector)
Parameters
Test Conditions
Symbol
V
CEO
V
ECO
I
C
I
CM
P
tot
T
j
Value
32
5
50
100
130
100
Unit
V
V
mA
mA
mW
°
C
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
t
p
/T = 0.5, t
p
10 ms
T
amb
25
°
C
Coupler
Parameters
Test Conditions
Symbol
V
IO
P
tot
T
amb
T
stg
T
sd
Value
8.2
250
–55 to +85
–55 to +100
260
Unit
kV
mW
°
C
°
C
°
C
AC isolation test voltage (RMS)
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
T
amb
25
°
C
2 mm from case t
10 s
相關(guān)PDF資料
PDF描述
CNY21N Optocoupler with Phototransistor Output
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