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| 型號： | CNY17G-F3-004 |
| 英文描述： | Optoelectronic |
| 中文描述： | 光電 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 146K |
| 代理商： | CNY17G-F3-004 |
5–1
FEATURES
High Current Transfer Ratio
CNY17-1, 40 to 80%
CNY17-2, 63 to 125%
CNY17-3, 100 to 200%
CNY17-4, 160 to 320%
Breakdown Voltage, 5300 VAC
RMS
Field-Effect Stable by TRIOS*
Long Term Stability
Industry Standard Dual-in-Line Package
Underwriters Lab File #E52744
VDE #0884, Available with Option 1
DESCRIPTION
The CNY17 is an optically coupled pair consisting
of a Gallium Arsenide infrared emitting diode opti-
cally coupled to a silicon NPN phototransistor.
Signal information, including a DC level, can be
transmitted by the device while maintaining a high
degree of electrical isolation between input and out-
put.
The CNY17 can be used to replace relays and
transformers in many digital interface applications,
as well as analog applications such as CRT modu-
lation.
Maximum Ratings
(T
A
=25
Emitter
Reverse Voltage .................................................6 V
Forward Current............................................ 60 mA
Surge Current (t
≤
10
μ
s)................................... 2.5 A
Power Dissipation.......................................100 mW
Detector
Collector-Emitter Breakdown Voltage...............70 V
Emitter-Base Breakdown Voltage.......................7 V
Collector Current.......................................... 50 mA
Collector Current (t <1 ms)......................... 100 mA
Power Dissipation.......................................150 mW
Package
Isolation Test Voltage (Between emitter &
detector referred to climate DIN 40046,
part 2, Nov. 74) ..............................5300 VAC
RMS
Creepage Distance
.......................................... ≥
7 mm
Clearance Distance
......................................... ≥
7 mm
Isolation Thickness between
Emitter and Detector
.................................≥
0.4 mm
Comparative Tracking Index per DIN IEC 112/
VDE0303, part 1.............................................175
Isolation Resistance
V
IO
=500 V, T
A
=25
°
C
V
IO
=500 V, T
A
=100
°
C
Storage Temperature................... –55
Operating Temperature ............... –55
J unction Temperature....................................100
Soldering Temperature (max . 10 s, dip soldering:
distance to seating plane
°
C)
...................................≥
10
12
................................≥
10
11
°
C
°
C
°
C
°
C to +150
°
C to +100
≥
1.5 mm) ..........260
°
C
V
D E
Characteristics
(T
A
=25
°
C)
Symbol
Unit
Condition
Emitter
Forward Voltage
V
F
1.25
(
≤
1.65)
V
I
F
= 60 mA
Breakdown Voltage
V
BR
≥
6
V
I
R
= 10 mA
Reverse Current
I
R
0.01 (
≤
10)
μ
A
V
R
= 6 V
Capacitance
25
pF
V
R
= 0 V, f =1 MHz
Thermal Resistance
R
thjamb
750
K/W
Detector
Capacitance
C
CE
C
CB
C
EB
5.2
6.5
7.5
pF
pF
pF
V
CE
=5 V, f =1 MHz
V
CB
=5 V, f =1 MHz
V
EB
=5 V, f =1 MHz
Thermal Resistance
R
thjamb
500
K/W
Package
Collector-Emitter
Saturation Voltage
V
CEsat
0.25 (
≤
0.4)
V
I
F
=10 mA,
I
C
=2.5 mA
Coupling Capacitance
C
C
0.6
pF
Dimensions in inches (mm)
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
.110 (2.79)
.150 (3.81)
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
Pin One ID
6
5
4
1
2
3
18
°
typ.
4
°
typ.
1
2
3
6
5
4
Base
Collector
Emitter
Anode
Cathode
NC
CNY17 SERIES
TRIOS“ PHOTOTRANSISTOR
OPTOCOUPLER
This document was created with FrameMaker 4.0.4
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