
Document Number: 83606
www.vishay.com
Revision 17-August-01
2–68
FEATURES
High Current Transfer Ratio
CNY17-1, 40 to 80%
CNY17-2, 63 to 125%
CNY17-3, 100 to 200%
CNY17-4, 160 to 320%
Breakdown Voltage, 5300 VRMS
Field-Effect Stable by TRIOS—TRansparent
IOn Shield
Long Term Stability
Industry Standard Dual-in-Line Package
Underwriters Lab File #E52744
VDE #0884, Available with Option 1
DESCRIPTION
The CNY17 is an optically coupled pair consisting
of a Gallium Arsenide infrared emitting diode opti-
cally coupled to a silicon NPN phototransistor.
Signal information, including a DC level, can be trans-
mitted by the device while maintaining a high degree
of electrical isolation between input and output.
The CNY17 can be used to replace relays and trans-
formers in many digital interface applications, as well
as analog applications such as CRT modulation.
Maximum Ratings (TA=25°C)
Emitter
Reverse Voltage .............................................6.0 V
Forward Current .......................................... 60 mA
Surge Current (t
≤10 s)................................. 2.5 A
Power Dissipation......................................100 mW
Detector
Collector-Emitter Breakdown Voltage..............70 V
Emitter-Base Breakdown Voltage ...................7.0 V
Collector Current ......................................... 50 mA
Collector Current (t <1.0 ms)..................... 100 mA
Power Dissipation......................................150 mW
Package
Isolation Test Voltage (between emitter &
detector referred to climate DIN 50014,
part 2, Nov. 74) (t=1 sec)...................5300 VRMS
Creepage Distance .................................
≥7.0 mm
Clearance Distance.................................
≥7.0 mm
Isolation Thickness between
Emitter and Detector.............................
≥0.4 mm
Comparative Tracking Index per DIN IEC 112/
VDE0303, part 1 ........................................... 175
Isolation Resistance
VIO=500 V, TA=25°C.............................. ≥10
12
VIO=500 V, TA=100°C............................ ≥10
11
Storage Temperature...................–55°C to +150°C
Operating Temperature ...............–55°C to +100°C
Junction Temperature................................... 100°C
Soldering Temperature (max. 10 s, dip soldering:
distance to seating plane
≥1.5 mm) .........260°C
V
DE
Characteristics (TA=25°C)
Parameter
Symbol
Values
Unit
Condition
Emitter
Forward Voltage
VF
1.25
(
≤1.65)
V
IF = 60 mA
Breakdown Voltage
VBR
≥6.0
IR = 10 mA
Reverse Current
IR
0.01 (
≤10)
A
VR = 6.0 V
Capacitance
—
25
pF
VR=0 V, f=1.0 MHz
Thermal Resistance
Rthjamb
750
K/W
—
Detector
Capacitance
CCE
CCB
CEB
5.2
6.5
7.5
pF
VCE=5.0 V, f=1.0 MHz
VCB=5.0V,f=1.0MHz
VEB=5.0 V, f=1.0 MHz
Thermal Resistance
Rthjamb
500
K/W
—
Package
Collector-Emitter
Saturation Voltage
VCEsat
0.25 (
≤0.4)
V
IF =10 mA,
IC=2.5 mA
Coupling Capacitance
CC
0.6
pF
—
.010 (.25)
typ.
.114 (2.90)
.130 (3.0)
.130 (3.30)
.150 (3.81)
.031 (0.80) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.048 (1.22)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
pin one ID
6
5
4
1
2
3
18
°
3
°–9°
.300–.347
(7.62–8.81)
4
°
typ.
1
2
3
6
5
4
Base
Collector
Emitter
Anode
Cathode
NC
Dimensions in inches (mm)
CNY17
TRIOS Phototransistor
Optocoupler