參數(shù)資料
型號: CNY17-1
廠商: VISHAY SEMICONDUCTORS
元件分類: 光電耦合器
英文描述: 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
封裝: ROHS COMPLIANT, DIP-6
文件頁數(shù): 2/8頁
文件大?。?/td> 137K
代理商: CNY17-1
www.vishay.com
For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83606
2
Rev. 1.7, 04-Nov-10
CNY17
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection
Note
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Note
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
OUTPUT
Collector emitter breakdown voltage
BVCEO
70
V
Emitter base breakdown voltage
BVEBO
7V
Collector current
IC
50
mA
t < 1 ms
IC
100
mA
Power dissipation
Pdiss
150
mW
COUPLER
Isolation test voltage
between emitter and detector
t = 1 s
VISO
5300
VRMS
Creepage distance
≥ 7mm
Clearance distance
≥ 7mm
Isolation thickness between
emitter and detector
≥ 0.4
mm
Comparative tracking index
per DIN IEC 112/VDE 0303, part 1
175
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
Soldering temperature
max. 10 s, dip soldering: distance to
seating plane
≥ 1.5 mm
Tsld
260
°C
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
ELECTRICAL CHARACTERISTCS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 60 mA
VF
1.25
1.65
V
Breakdown voltage
IR = 10 mA
VBR
6V
Reverse current
VR = 6 V
IR
0.01
10
μA
Capacitance
VR = 0 V, f = 1 MHz
CO
25
pF
Thermal resistance
Rth
750
K/W
OUTPUT
Collector emitter capacitance
VCE = 5 V, f = 1 MHz
CCE
5.2
pF
Collector base capacitance
VCB = 5 V, f = 1 MHz
CCB
6.5
pF
Emitter base capacitance
VEB = 5 V, f = 1 MHz
CEB
7.5
pF
Thermal resistance
Rth
500
K/W
COUPLER
Collector emitter, saturation voltage
VF = 10 mA, IC = 2.5 mA
VCEsat
0.25
0.4
V
Coupling capacitance
CC
0.6
pF
Collector emitter, leakage current
VCE = 10 V
CNY17-1
ICEO
250
nA
CNY17-2
ICEO
250
nA
CNY17-3
ICEO
5
100
nA
CNY17-4
ICEO
5
100
nA
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