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參數(shù)資料
| 型號： | CNW85S |
| 廠商： | QT OPTOELECTRONICS |
| 元件分類： | 光電耦合器 |
| 英文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 56K |
| 代理商： | CNW85S |
DESCRIPTION
The CNW82, CNW83, CNW84 and CNW85 optocouplers consist
of a GaAs infrared emitting diode which is optically coupled to an
NPN phototransistor.
The CNW82 and CNW84 do not have the base pin connected for
improved noise immunity.
FEATURES
Wide body DIL encapsulation, with a pin distance of 10.16 mm.
Minimum creepage distance 10 mm.
High current transfer ratio and Low Saturation Voltage,
making the device suitable for use with TTL integrated
circuits.
High degree of AC and DC insulation (5900 V (RMS) and
8340 V (DC)).
Minimum 2 mm isolation thickness between emitter and
detector. (CNW84/85 only).
An external clearance 0f 9.6 mm minimum and an external
creepage distance of 10 mm minimum.
Collector-Emitter Breakdown Voltage: 50 V (CNW82/83 only).
Collector-Emitter Breakdown Voltage: 80 V (CNW84/85 only).
UL recognized (File # E90700)
WIDE BODY, HIGH ISOLATION
OPTOCOUPLERS
CNW82
CNW83
CNW84
CNW85
1/18/00
200015A
Parameter
Symbol
Value
Units
EMITTER
IF
100
mA
Forward Current - Continuous
Forward Current - Peak (PW = 100s, 120pps)
IF(pk)
3A
Reverse Voltage
VR
5V
Total Power Dissipation @ TA = 25°C
PD
200
mW
Derate above 25°C
2.0
mW/°C
DETECTOR
IC
100
mA
Collector Current-Continuous
Emitter-Collector Voltage
VECO
7V
Collector-Emitter Voltage
(CNW82/CNW83)
VCEO
50
V
(CNW84/CNW85)
80
Collector-Base Voltage
(CNW83)
VCBO
70
V
(CNW85)
120
Total Power Dissipation @ TA = 25°C
PD
200
mW
Derate above 25°C
2.0
mW/°C
TOTAL DEVICE
Tstg
-55 to 150
°C
Storage Temperature Range
Ambient Operating Temperature Range
TA
-40 to 100
°C
Lead Soldering Temperature
TL
260
°C
(1/16” from case, 10 sec. duration)
ABSOLUTE MAXIMUM RATINGS
SCHEMATIC
CNW82/84
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. NO CONNECTION
2
1
3NC
5
6
CNW83/85
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
4
2
1
3NC
5
6
NC
4
6
1
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