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參數(shù)資料
| 型號： | CN1 |
| 英文描述： | TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 150MA I(C) | TO-92 |
| 中文描述： | 晶體管|晶體管|叩| 12V的五（巴西）總裁| 150毫安一（c）|至92 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 151K |
| 代理商： | CN1 |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON EPITAXIAL TRANSISTOR
CN 1
CP4
TO-92
Plastic Package
Audio Frequency General Purpose and Driver Stage Amplofier Application for Transistor
Radios.
Complementary CP 4
ABSOLUTE MAXIMUM RATINGS (Ta=25oC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Power Dissipation
Operating And Storage Junction
Temperature Range
SYMBOL
BV
CEO
BV
CBO
BV
EBO
I
C
P
C
T
j
, T
stg
VALUE
12
12
4.5
150
400
-55 to +125
UNIT
V
V
V
mA
mW
oC
ELECTRICAL CHARACTERISTICS (Ta=25oC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
UNIT
MIN
12
12
4.5
TYP
MAX
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
BV
CEO
BV
CBO
BV
EBO
I
CBO
h
FE
V
CE(sat)
I
C
=1mA,I
B
=0
I
C
=100
μ
A,I
E
=0
I
E
=100
μ
A, I
C
=0
V
CB
=10V, I
E
= 0
V
CE
=5V,I
C
=2mA
I
C
=10mA,I
B
=0.5mA
I
C
=100mA,I
B
=5mA
V
V
V
μ
A
1
50
700
0.25
0.65
V
V
VALUE
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 3
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