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參數(shù)資料
| 型號(hào)： | CMT2301GM233* |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | CMT2301 |
| 中文描述： | CMT2301 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 293K |
CMT2301
P-C
HANNEL
E
NHANCEMENT
M
ODE
M
OSFET
2005/01/05 Champion Microelectronic Corporation
Page 2
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
V
DSS
V
GSS
Value
-20
±8
-2.5
-1.5
-10
-1.6
1.25
0.8
150
-55/150
120
Unit
V
V
Drain- to- Source Voltage
Gate-to-Source Voltage
T
A
=25
℃
T
A
=70
℃
Continuous Drain Current(T
J
=150
℃
)
I
D
A
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
I
DM
I
S
A
A
T
A
=25
℃
T
A
=70
℃
Power Dissipation
P
D
W
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
J
= 25
℃
.
T
J
℃
℃
℃
/W
T
STG
R
θ
JA
CMT2301
Typ
Characteristic
Symbol
Min
Max
Units
Static
Drain-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= -250
μ
A)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= -250
μ
A)
Gate Leakage Current
(V
DS
=0 V, V
GS
=
±
8 V)
Zero Gate Voltage Drain Current
(V
DS
= -20 V, V
GS
= 0 V)
(V
DS
= -20 V, V
GS
= 0 V, T
J
= 55
℃
)
On-State Drain Current
(V
DS
≤
-5 V, V
GS
= -4.5V)
(V
DS
≤
-5 V, V
GS
= -2.5V)
Drain-Source On-Resistance
(V
GS
= -4.5 V, I
D
= -2.8A)
(V
GS
= -2.5 V, I
D
= -2.0A)
Forward Transconductance (V
DS
= -5 V, I
D
= -2.8V)
Diode Forward Voltage (I
S
=-1.6A,V
GS
=0V)
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
(BR)DSS
-20
V
V
GS(th)
-0.45
-1.5
V
I
GSS
±
100
nA
I
DSS
-1
-10
μ
A
I
D(on)
-6
-3
A
R
DS(on)
0.105
0.145
6.5
-0.8
0.13
0.19
-1.2
g
FS
V
SD
S
V
C
iss
C
oss
C
rss
t
d(on)
tr
t
d(off)
tf
Q
g
Q
gs
Q
gd
415
223
87
13
36
42
34
5.8
0.85
1.7
(V
DS
= -6 V, V
GS
=-0V,
f = 1.0 MHz)
pF
25
60
70
60
10
Turn-On Time
Turn-Off Time
(V
DD
= -6 V,R
L
=6
I
D
= -1.0 A,V
GEN
= -4.5 V,
R
G
= 6
)
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(V
DS
= -6 V, I
D
= -2.8 A,
V
GS
=-4.5V)
nC
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