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參數(shù)資料
| 型號： | CMT20N220 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Champion Microelectronic Corporation |
| 中文描述： | 冠軍微電子公司 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 374K |
| 代理商： | CMT20N220 |
CMT20N15
P
OWER
MOSFET
2001/12/24
Preliminary
Rev. 1
Champion Microelectronic Corporation
Page 2
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
J
= 25
℃
.
CMT20N15
Typ
Characteristic
Symbol
V
(BR)DSS
Min
150
Max
Units
V
Drain-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 250
μ
A)
Drain-Source Leakage Current
(V
DS
= 150 V, V
GS
= 0 V)
(V
DS
= 150 V, V
GS
= 0 V, T
J
= 125
℃
)
Gate-Source Leakage Current-Forward
(V
gsf
= 20 V, V
DS
= 0 V)
Gate-Source Leakage Current-Reverse
(V
gsr
= 20 V, V
DS
= 0 V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
μ
A)
Static Drain-Source On-Resistance (V
GS
= 10 V, I
D
= 10A) *
Drain-Source On-Voltage (V
GS
= 10 V)
(I
D
= 10.0 A)
Forward Transconductance (V
DS
= 13 V, I
D
= 10A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
I
DSS
10
100
100
μ
A
I
GSSF
nA
I
GSSR
100
nA
V
GS(th)
2.0
4.0
V
R
DS(on)
V
DS(on)
0.12
0.13
2.8
V
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
L
D
8.0
11
1133
332
105
11
77
33
49
39.1
7.5
22
4.5
mhos
pF
pF
pF
1627
474
174
25
153
67
97
55.9
(V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz)
ns
ns
ns
ns
(V
DD
= 75 V, I
D
= 20 A,
V
GS
= 10 V,
R
G
= 9.1
) *
nC
nC
nC
(V
DS
= 120 V, I
D
= 20 A,
V
GS
= 10 V)*
nH
L
S
7.5
nH
V
SD
t
on
t
rr
1.5
V
ns
ns
**
160
(I
S
= 20 A, V
GS
= 0 V,
d
IS
/d
t
= 100A/μs)
* Pulse Test: Pulse Width
≦
300μs, Duty Cycle
≦
2%
** Negligible, Dominated by circuit inductance
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