參數(shù)資料
型號: CMPTA14E
廠商: CENTRAL SEMICONDUCTOR CORP
元件分類: 小信號晶體管
中文描述: 500 mA, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 1/2頁
文件大小: 327K
代理商: CMPTA14E
CMPTA14E
ENHANCED SPECIFICATION
SURFACE MOUNT NPN
SILICON DARLINGTON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPTA14E is an
Enhanced version of the CMPTA14 NPN Darlington
Transistor. This device is manufactured by the epitaxial
planar process, epoxy molded in a surface mount
SOT-23 package, designed for applications requiring
extremely high gain.
MARKING CODE: C1NE
FEATURED ENHANCED SPECIFICATIONS:
BVCBO from 30V min to 40V min.
VCE(SAT) from 1.5V max to 1.0V max.
h
FE from 10K min to 30K min.
Enhanced specification
Additional Enhanced specification
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCES
40
V
Emitter-Base Voltage
VEBO
10
V
Continuous Collector Current
IC
500
mA
Power Dissipation
PD
350
mW
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +150
°C
Thermal Resistance
ΘJA
357
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=40V
100
nA
IEBO
VEB=10V
100
nA
BVCES
IC=100A
40
60
V
VCE(SAT)
IC=100mA, IB=0.1mA
0.75
1.0
V
VBE(ON)
VCE=5.0V, IC=100mA
2.0
V
hFE
VCE=5.0V, IC=10mA
30,000
70,000
hFE
VCE=5.0V, IC=100mA
40,000
75,000
hFE
VCE=5.0V, IC=500mA
10,000
35,000
fT
VCE=5.0V, IC=10mA, f=100MHz
125
MHz
SOT-23 CASE
R5 (1-February 2010)
www.centra lsemi.com
相關(guān)PDF資料
PDF描述
CMRA6045-10
CMRD6045-10
CMRD6065-10
CMRA6065-10
CMRD6055-10
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