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參數(shù)資料
| 型號： | CMMT495 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| 中文描述： | NPN硅外延平面晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 176K |
| 代理商： | CMMT495 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CMMT495
SOT-23
Formed SMD Package
Marking Code is =495
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Current Peak
Base Current
Power Dissipation @ T
a
=25oC
Operating And Storage Junction
Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
UNITS
V
V
V
A
A
mA
mW
T
j,
T
stg
oC
Electrical Characterstics (T
a
=25oC unless specified otherwise)
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Cut Off Current
Collector Cut Off Current
Emitter Cut Off Current
Collector Emitter Saturation
Voltage
SYMBOL
V
CBO
*V
CEO(sus)
V
EBO
I
CBO
I
CES
I
EBO
CONDITIONS
I
C
=100
μ
A, I
E
=0
I
C
=10mA, I
B
=0
I
E
=100
μ
A, I
C
=0
V
CB
=150V, I
E
=0
V
CE
=150V, V
BE
=0
V
EB
=4V, I
C
=0
I
C
=250mA, I
B
=25mA
I
C
=500mA, I
B
=50mA
MIN
170
150
5
TYP
MAX
UNIT
V
V
V
nA
nA
nA
V
V
100
100
100
0.2
0.3
Base Emitter On Voltage
DC Current Gain
*V
BE(on)
h
FE
V
CE
=10V, I
C
=500mA
V
CE
=10V, I
C
=1mA
*V
CE
=10V, I
C
=250mA
*V
CE
=10V, I
C
=500mA
V
CE
=10V, I
C
=1A
V
CE
=10V, I
C
=50mA, f=100MHz
V
CB
=10V, f=1MHz
1.0
V
100
100
50
10
100
300
Transition Frequency
Output Capacitance
f
T
MHz
pF
C
obo
10
*Pulse Test: Pulse Width =300
m
s, Duty Cycle <2%
V
2
200
500
VALUE
170
150
5
1
- 55 to +150
*V
CE(sat)
Base Emitter Saturation Voltage
*V
BE(sat)
I
C
=500mA, I
B
=50mA
1.0
PIN CONFIGURATION (NPN)
1 = BASE
2 = EMITTER
3 = COLLECTOR
2
1
3
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
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