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參數(shù)資料
| 型號： | CMMT493 |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 78K |
| 代理商： | CMMT493 |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CMMT491
SOT-23
Formed SMD Package
Marking Code is =491
Medium Power Transistor
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Current Peak
Power Dissipation @ T
a
=25oC
Operating and Storage Junction
Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
D
UNITS
V
V
V
A
A
mW
T
j,
T
stg
oC
Electrical Characterstics (T
a
=25oC unless specified otherwise)
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Cut off Current
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Saturation
Voltage
SYMBOL
V
CBO
*V
CEO(sus)
V
EBO
I
CBO
I
CES
I
EBO
CONDITIONS
I
C
=100
μ
A, I
E
=0
I
C
=10mA, I
B
=0
I
E
=100
μ
A, I
C
=0
V
CB
=60V, I
E
=0
V
CE
=60V, V
BE
=0
V
EB
=4V, I
C
=0
I
C
=500mA, I
B
=50mA
I
C
=1A, I
B
=100mA
MIN
80
60
5
TYP
MAX
UNIT
V
V
V
nA
nA
nA
V
V
100
100
100
0.25
0.50
Base Emitter On Voltage
DC Current Gain
*V
BE(on)
*h
FE
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=500mA
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=2A
V
CE
=10V, I
C
=50mA, f=100MHz
V
CB
=10V, f=1MHz
1.00
V
100
100
80
30
150
300
Transition Frequency
Output Capacitance
f
T
MHz
pF
C
obo
10
*Pulse Test: Pulse Width =300
m
s, Duty Cycle <2%
I
C
=1A, I
B
=100mA
1.10
*V
CE(sat)
Base Emitter Saturation Voltage
*V
BE(sat)
V
2
VALUE
80
60
5
1
500
- 55 to +150
PIN CONFIGURATION (NPN)
1 = BASE
2 = EMITTER
3 = COLLECTOR
2
1
3
IS/ISO 9002
Lic# QSC/L-000019.3
Continental Device India Limited
Data Sheet
Page 1 of 3
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