參數(shù)資料
型號: CMH08A
廠商: Toshiba Corporation
英文描述: Zener Diode; Application: General; Pd (mW): 400; Vz (V): 12.2 to 12.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
中文描述: 開關電源的應用
文件頁數(shù): 1/5頁
文件大?。?/td> 192K
代理商: CMH08A
CMH08A
2006-11-08
1
TOSHIBA High Efficiency Rectifier Silicon Epitaxial Type
CMH08A
Switching Mode Power Supply Applications
Repetitive peak reverse voltage: V
RRM
= 400 V
Average forward current: I
F (AV)
= 2.0 A
Low forward voltage: V
FM
=1.8 V(Max.)
Very Fast Reverse-Recovery Time: trr =35ns(Max.)
Suitable for compact assembly due to small surface-mount package
“M
FLAT
TM
” (Toshiba package name)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
V
RRM
I
F (AV)
400
V
Average forward current
2.0 (Note 1)
A
Peak one cycle surge forward current
(non-repetitive)
I
FSM
20 (50 Hz)
A
Junction temperature
T
j
T
stg
40~150
40~150
°C
Storage temperature range
°C
Note 1: T
99°C Device mounted on a seramic board
board size: 50 mm
×
50 mm
soldering land: 2 mm
×
2 mm
board thickness:0.64t
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
V
FM (1)
V
FM (2)
V
FM (3)
I
RRM
t
rr
t
fr
I
FM
=
0.1 A (pulse test)
I
FM
=
1.0 A (pulse test)
I
FM
=
2.0 A (pulse test)
V
RRM
=
400 V (pulse test)
I
F
=
1 A, di/dt =
30 A/
μ
s
I
F
=
1.0 A
Device mounted on a ceramic board
(board size: 50 mm
×
50 mm)
(soldering land: 2 mm
×
2 mm)
(board thickness: 0.64 t)
0.88
1.3
Peak forward voltage
1.6
1.8
V
Peak repetitive reverse current
10
μ
A
Reverse recovery time
35
ns
Forward recovery time
100
ns
60
Device mounted on a glass-epoxy board
(board size: 50 mm
×
50 mm)
(soldering land: 6 mm
×
6 mm)
(board thickness: 1.6 t)
135
Thermal resistance
(junction to ambient)
R
th (j-a)
Device mounted on a glass-epoxy board
(board size: 50 mm
×
50 mm)
(soldering land: 2.1 mm
×
1.4 mm)
(board thickness: 1.6 t)
210
°C/W
Thermal resistance
(junction to lead)
R
th (j-
)
16
°C/W
Unit: mm
JEDEC
JEITA
TOSHIBA
3-4E1A
Weight: 0.023 g (typ.)
相關PDF資料
PDF描述
CMM0330 824 to 928 MHz 3V, 30.5 dBm Multi-Mode Power Amplifier
CMM0330-AK 824 to 928 MHz 3V, 30.5 dBm Multi-Mode Power Amplifier
CMM0330-AK-000T 824 to 928 MHz 3V, 30.5 dBm Multi-Mode Power Amplifier
CMM0335 890 to 915 MHz 6V, 35 dBm, GSM Power Amplifier
CMM0335-AK 890 to 915 MHz 6V, 35 dBm, GSM Power Amplifier
相關代理商/技術參數(shù)
參數(shù)描述
CMH08A(TE12L,Q) 功能描述:整流器 Switching Diode HED 2A 200V 35ns 1.8V RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
CMH08A(TE12L,Q,M) 功能描述:整流器 400 Vrrm 2.0A IF 1.8V VFM 20A IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
CMH1/21001004F 制造商:TT Electronics / IRC 功能描述:CMH1/21001004F
CMH1/21001004G 制造商:TT Electronics / IRC 功能描述:CMH1/21001004G
CMH1/21001004J 制造商:TT Electronics / IRC 功能描述:CMH1/21001004J