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參數(shù)資料
| 型號(hào)： | CMBTA44 |
| 廠商： | Continental Device India Limited |
| 英文描述： | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| 中文描述： | NPN硅外延平面晶體管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 175K |
| 代理商： | CMBTA44 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CMBTA44
SOT-23
Formed SMD Package
Marking Code is =3Z
Designed for Extremely High Voltage Applications
ABSOLUTE MAXIMUM RATINGS (Ta=25C)
DESCRIPTION
SYMBOL
UNITS
Collector Base Voltage
VCBO
V
Collector Emitter Voltage
VCEO
V
Emitter Base Voltage
VEBO
V
Collector Current
IC
mA
Collector Power Dissipation
PD
mW
Operating And Storage Junction
Temperature Range
Tj, Tstg
C
THERMAL RESISTANCE
Junction to Ambient in free air
Rth(j-a)
C/W
Electrical Characterstics (Ta=25C unless specified otherwise)
DESCRIPTION
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
Collector Cut Off Current
ICBO
VCB=400V, IE=0
100
nA
Collector Cut Off Current
ICES
VCE=400V, VBE=0
500
nA
Emitter Cut Off Current
IEBO
VEB=4V, IC=0
100
nA
Collector Base Voltage
VCBO
IC=100A, IE=0
450
V
Collector Emitter Voltage
VCES
IC=100A, VBE=0
450
V
Collector Emitter Voltage
VCEO
IC=1mA, IB=0
400
V
Emitter Base Voltage
VEBO
IE=10A, IC=0
6
V
IC=1mA, IB=0.1mA
0.40
V
IC=10mA, IB=1mA
0.50
V
IC=50mA, IB=5mA
0.75
V
Base Emitter Saturation Voltage
VBE(sat)
IC=10mA, IB=1mA
0.75
V
DC Current Gain
hFE
VCE =10V, IC=1mA
40
VCE =10V, IC=10mA
50
200
VCE =10V, IC=50mA
45
VCE =10V, IC=100mA
20
Transition Frequency
fT
VCE=10V, IC=10mA, f=10MHz
20
MHz
Output Capacitance
Cob
VCB=20V, IE =0, f=1MHz
7.0
pF
Input Capacitance
Cib
VEB =0.5V, Ic=0, f=1MHz
130
pF
VALUE
450
400
6
300
350
- 65 to+150
357
Collector Emitter Saturation
Voltage
VCE(sat)
PIN CONFIGURATION (NPN)
1 = BASE
2 = EM ITTER
3 = COLLECTOR
2
1
3
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
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