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參數(shù)資料
| 型號： | CMBT8050C |
| 廠商： | Continental Device India Limited |
| 英文描述： | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| 中文描述： | NPN硅外延平面晶體管 |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 175K |
| 代理商： | CMBT8050C |
Notes
CMBT8050
SOT-23
Formed SMD Package
CMBT8050Rev_2 240502E
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished in the Data Sheet and
on the CDIL Web Site/CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for
inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or
use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not
designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual
Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or
applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
email@cdil.com
www.cdilsemi.com
Continental Device India Limited
Data Sheet
Page 3 of 3
相關PDF資料 |
PDF描述 |
|---|---|
| CMBT8050D | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| CMBT8050E | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| CMBT8550 | PNP SILICON PLANAR EPITAXIAL TRANSISTOR |
| CMBT8550C | PNP SILICON PLANAR EPITAXIAL TRANSISTOR |
| CMBT8550D | PNP SILICON PLANAR EPITAXIAL TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CMBT8050D | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| CMBT8050E | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| CMBT8098 | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| CMBT8099 | 功能描述:兩極晶體管 - BJT Si Planar Trans 80V, 10uA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CMBT8099-T | 功能描述:兩極晶體管 - BJT NPN Gen Pur RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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