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參數(shù)資料
| 型號(hào)： | CMBD1201 |
| 廠商： | Continental Device India Limited |
| 英文描述： | SILICON PLANAR EPITAXIAL HIGH SPEED DIODES |
| 中文描述： | 硅平面高速二極管外延 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 131K |
| 代理商： | CMBD1201 |
Continental Device India Limited
Data Sheet
Page 1 of 3
SILICON PLANAR EPITAXIAL HIGH SPEED DIODES
CMBD1201, 1202, CMBD4148 are all single diodes
CMBD1203 is a dual diode, in series
CMBD1204 is a dual diode, common cathode
CMBD1205 is a dual diode, common anode
ABSOLUTE MAXIMUM RATINGS (per diode)
Continuous reverse voltage
VR
max.
75 V
Repetitive peak reverse voltage
VRRM
max.
100 V
Repetitive peak forward current
IFRM
max.
500 mA
Forward current
IF
max.
215 mA
Junction temperature
Tj
max.
150 ° C
Forward voltage at IF = 10 mA
VF
<
0.855 V
CMBD1201, CMBD1202, CMBD1203
CMBD1204, CMBD1205, CMBD4148
Marking
CMBD1201 – 24
CMBD1202 – 25
CMBD1203 – 26
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
3
1
2
CMBD1201
CMBD4148
CMBD1204 – 27
CMBD1205 – 28
CMBD4148 – 5H
2
1
CMBD1202
3
1
2
CMBD1203
3
1
2
3
CMBD1204
1
2
3
CMBD1205
SOT-23 Formed SMD Package
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CMBD1202 | SILICON PLANAR EPITAXIAL HIGH SPEED DIODES |
| CMBD1202 | 0.215 A, 75 V, SILICON, SIGNAL DIODE |
| CMBD1203 | SILICON PLANAR EPITAXIAL HIGH SPEED DIODES |
| CMBD1204 | SILICON PLANAR EPITAXIAL HIGH SPEED DIODES |
| CMBD1205 | SILICON PLANAR EPITAXIAL HIGH SPEED DIODES |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CMBD1202 | 制造商:RECTRON 制造商全稱:Rectron Semiconductor 功能描述:SMALL SIGNAL DIODE VOLTAGE RANGE 75 Volts CURRENT 215 mAmpere |
| CMBD1203 | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:SILICON PLANAR EPITAXIAL HIGH SPEED DIODES |
| CMBD1204 | 制造商:RECTRON 制造商全稱:Rectron Semiconductor 功能描述:SMALL SIGNAL DIODE VOLTAGE RANGE 75 Volts CURRENT 215 mAmpere |
| CMBD1205 | 制造商:RECTRON 制造商全稱:Rectron Semiconductor 功能描述:SMALL SIGNAL DIODE VOLTAGE RANGE 75 Volts CURRENT 215 mAmpere |
| CMBD18277 | 制造商:Siemens 功能描述: |
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