參數(shù)資料
型號: CM50DY-24H
廠商: POWEREX INC
元件分類: IGBT 晶體管
英文描述: Dual IGBTMOD 50 Amperes/1200 Volts
中文描述: 50 A, 1200 V, N-CHANNEL IGBT
文件頁數(shù): 1/4頁
文件大?。?/td> 48K
代理商: CM50DY-24H
Sep.1998
Dimensions
Inches
Millimeters
A
3.70
94.0
B
3.150
±
0.01
80.0
±
0.25
C
1.57
40.0
D
1.34
34.0
E
1.22 Max.
31.0 Max.
F
0.90
23.0
G
0.85
21.5
H
0.79
20.0
J
0.71
18.0
Dimensions
Inches
Millimeters
K
0.67
17.0
L
0.63
16.0
M
0.51
13.0
N
0.47
12.0
P
0.28
7.0
Q
0.256 Dia.
Dia. 6.5
R
0.16
4.0
S
M5 Metric
M5
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of two
IGBTs in a half-bridge configuration
with each transistor having a re-
verse-connected super-fast recov-
ery free-wheel diode. All compo-
nents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system as-
sembly and thermal management.
Features:
u
Low Drive Power
u
Low V
CE(sat)
u
Discrete Super-Fast Recovery
Free-Wheel Diode
u
High Frequency Operation
u
Isolated Baseplate for Easy
Heat Sinking
Applications:
u
AC Motor Control
u
Motion/Servo Control
u
UPS
u
Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM50DY-24H
is a 1200V (V
CES
), 50 Ampere
Dual IGBT Module.
Type
Current Rating
Amperes
V
CES
Volts (x 50)
CM
50
24
MITSUBISHI IGBT MODULES
CM50DY-24H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Outline Drawing and Circuit Diagram
B
F
F
C
K
R
R
R
D
A
E
G
N
H
H
J
P
M
C1
E
(3 TYP.)
Q - DIA.
(2 TYP.)
(3 TYP.)
E2
C2E1
E
G
G
S - M5 THD
L
E1
C1
E2
TAB#110 t=0.5
G1
E2
G2
C2E1
相關(guān)PDF資料
PDF描述
CM50DY-28H MEDIUM POWER SWITCHING USE INSULATED TYPE
CM50DY-28H Dual IGBTMOD 50 Amperes/1400 Volts
CM50E3U-24H MEDIUM POWER SWITCHING USE INSULATED TYPE
CM50E3U-24H Chopper IGBTMOD 50 Amperes/1200 Volts
CM50MD-12H MEDIUM POWER SWITCHING USE INSULATED TYPE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CM50DY28 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.4KV V(BR)CES | 50A I(C)
CM50DY-28H 功能描述:IGBT MOD DUAL 1400V 50A H SER RoHS:否 類別:半導(dǎo)體模塊 >> IGBT 系列:IGBTMOD™ 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
CM50E3U-24H 功能描述:IGBT MOD CHOP 1200V 50A U SER RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:IGBTMOD™ 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
CM50E3U-24H_09 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
CM50E3Y12E 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 50A I(C)