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參數(shù)資料
| 型號： | CM3004 |
| 廠商： | California Micro Devices Corporation |
| 英文描述： | 1.0 Amp Dual Mode Low-Dropout CMOS Regulator |
| 中文描述： | 1.0安培雙模式低壓差穩(wěn)壓器的CMOS |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 211K |
| 代理商： | CM3004 |
2005 California Micro Devices Corp. All rights reserved.
01/10/05
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
●
Tel: 408.263.3214
●
Fax: 408.263.7846
●
www.calmicro.com
3
CM3004
PRELIMINARY
Specifications
Note 1: The SOIC package used is thermally enhanced through the use of a fused integral leadframe. The power rating is based on
a printed circuit board heat spreading capability equivalent to 2 square inches of copper connected to the GND pins. Typical
multi-layer boards using power plane construction will provide this heat spreading ability without the need for additional ded-
icated copper area. (Please consult with factory for thermal evaluation assistance)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
ESD Protection (HBM)
Pin Voltages
IN, OUT, ADJ, EN
Storage Temperature Range
Operating Temperature Range
Junction
Power Dissipation (See note 1)
RATING
±
2000
UNITS
V
[GND - 0.4] to +6.0
-40 to +150
V
°C
-40 to +150
Internally Limited
°C
W
STANDARD OPERATING CONDITIONS
PARAMETER
V
IN
Ambient Operating Temperature Range
Load Current
C
EXT
VALUE
1.7 to 5.5
UNITS
V
-40 to +85
0 to 1000
10
±
20%
°C
mA
μ
F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CM3004-25SA | 1.0 Amp Dual Mode Low-Dropout CMOS Regulator |
| CM3004-25SF | 1.0 Amp Dual Mode Low-Dropout CMOS Regulator |
| CM300DU-12F | HIGH POWER SWITCHING USE |
| CM300DU-12F | Trench Gate Design Dual IGBTMOD⑩ 300 Amperes/600 Volts |
| CM300DU-12H | HIGH POWER SWITCHING USE INSULATED TYPE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CM3004-25SA | 制造商:CALMIRCO 制造商全稱:California Micro Devices Corp 功能描述:1.0 Amp Dual Mode Low-Dropout CMOS Regulator |
| CM3004-25SF | 制造商:CALMIRCO 制造商全稱:California Micro Devices Corp 功能描述:1.0 Amp Dual Mode Low-Dropout CMOS Regulator |
| CM300DU-12F | 功能描述:IGBT MOD DUAL 600V 300A F SER RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:IGBTMOD™ 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| CM300DU-12F_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
| CM300DU-12H | 功能描述:IGBT MOD DUAL 600V 300A U SER RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:IGBTMOD™ 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
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