
2004 California Micro Devices Corp. All rights reserved.
10
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
L
Tel: 408.263.3214
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Fax: 408.263.7846
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www.calmicro.com
01/15/04
CM3003
Performance Information (cont’d)
CM3003 Typical Thermal Characteristics
The overall junction to ambient thermal resistance
(
θ
JA
) for device power dissipation (PD) consists prima-
rily of two paths in series. The first path is the junction
to the case (
θ
JC
) which is defined by the package style,
and the second path is case to ambient (
θ
CA
) thermal
resistance which is dependent on board layout. The
final operating junction temperature for any set of con-
ditions can be estimated by the following thermal equa-
tion:
T
JUNC
= T
AMB
+ P
D
(
θ
JC
) + P
D
(
θ
CA
)
= T
AMB
+ P
D
(
θ
JA
)
The CM3003 uses a thermally enhanced package
where all the GND pins (5 through 8) are integral to the
leadframe. When this package is mounted on a double
sided printed circuit board with two square inches of
copper allocated for "heat spreading", the resulting
θ
JA
is about 50°C/W.
Based on a typical operating power dissipation of 1.0W
(3.0V-2.5Vx 2.0A) with an ambient of 70°C, the result-
ing junction temperature will be:
T
JUNC
= T
AMB
+ P
D
(
θ
JA
)
= 70°C + 1.0W X (50°C/W)
= 70°C + 50°C = 120°C
Thermal characteristics were measured using a double
sided board with two square inches of copper area
connected to the GND pin for "heat spreading".
Measurements showing performance up to junction
temperature of 125°C were performed under light load
conditions (5mA). This allows the ambient temperature
to be representative of the internal junction tempera-
ture.
Note: The use of multi-layer board construction with
separate ground and power planes will further enhance
the overall thermal performance. In the event of no
copper area being dedicated for heat spreading, a
multi-layer board construction, using only the minimum
size pad layout, will provide the CM3003 with an overall
θ
JA
of 70°C/W which allows up to 800mW to be safely
dissipated for the maximum junction temperature.
Internal Reference Voltage over Temperature
1.17
1.18
1.19
1.20
1.21
1.22
0
25
50
75
100
125
150
TEMPERATURE [
o
C]
R
v
Output Voltage (2.5V) over Temperature
2.45
2.46
2.47
2.48
2.49
2.50
2.51
2.52
2.53
2.54
2.55
0
25
50
75
100
125
150
TEMPERATURE [
o
C]
O
v
5mA Load
Ground Current over Temperature
300
310
320
330
340
350
0
25
50
75
100
125
150
TEMPERATURE [
o
C]
G
A