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| 型號(hào)： | CM3001-13MA |
| 英文描述： | Analog IC |
| 中文描述： | 模擬IC |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 47K |
| 代理商： | CM3001-13MA |
Sep.1998
MITSUBISHI IGBT MODULES
CM300DY-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, T
j
= 25
°
C unless otherwise specified
Ratings
Symbol
CM300DY-12H
Units
°
C
°
C
Volts
Junction Temperature
T
j
–40 to 150
Storage Temperature
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
–
–40 to 125
Collector-Emitter Voltage (G-E SHORT)
600
Gate-Emitter Voltage (C-E SHORT)
±
20
Volts
Collector Current (T
C
= 25
°
C)
Peak Collector Current
300
Amperes
600*
Amperes
Emitter Current** (T
C
= 25
°
C)
Peak Emitter Current**
300
Amperes
600*
Amperes
Maximum Collector Dissipation (T
C
= 25
°
C, T
j
≤
150
°
C)
Mounting Torque, M5 Main Terminal
1100
Watts
1.47 ~ 1.96
N · m
Mounting Torque, M6 Mounting
–
1.96 ~ 2.94
N · m
Weight
–
270
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V
iso
2500
Vrms
*Pulse width and repetition rate should be such that the device junction temperature (T
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
I
GES
V
GE(th)
V
CE(sat)
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 30mA, V
CE
= 10V
I
C
= 300A, V
GE
= 15V
I
C
= 300A, V
GE
= 15V, T
j
= 150
°
C
V
CC
= 300V, I
C
= 300A, V
GE
= 15V
I
E
= 300A, V
GE
= 0V
–
–
1.0
mA
Gate Leakage Current
–
–
0.5
μ
A
Volts
Gate-Emitter Threshold Voltage
4.5
6.0
7.5
Collector-Emitter Saturation Voltage
–
2.1
2.8**
Volts
–
2.15
–
Volts
Total Gate Charge
Q
G
V
EC
–
900
–
nC
Emitter-Collector Voltage
–
–
2.8
Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
–
–
30
nF
Output Capacitance
V
GE
= 0V, V
CE
= 10V
–
–
10.5
nF
Reverse Transfer Capacitance
–
–
6
nF
Resistive
Turn-on Delay Time
–
–
350
ns
Load
Rise Time
V
CC
= 300V, I
C
= 300A,
V
GE1
= V
GE2
= 15V, R
G
= 2.1
–
–
600
ns
Switching
Turn-off Delay Time
–
–
350
ns
Times
Fall Time
–
–
300
ns
Diode Reverse Recovery Time
I
E
= 300A, di
E
/dt = –600A/
μ
s
I
E
= 300A, di
E
/dt = –600A/
μ
s
–
–
110
ns
Diode Reverse Recovery Charge
–
0.81
–
μ
C
Thermal and Mechanical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
°
C/W
°
C/W
°
C/W
Thermal Resistance, Junction to Case
R
th(j-c)
R
th(j-c)
R
th(c-f)
Per IGBT
–
–
0.11
Thermal Resistance, Junction to Case
Per FWDi
–
–
0.24
Contact Thermal Resistance
Per Module, Thermal Grease Applied
–
–
0.065
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