參數(shù)資料
型號: CM100TU-24H
廠商: Mitsubishi Electric Corporation
英文描述: HIGH POWER SWITCHING USE INSULATED TYPE
中文描述: 大功率開關(guān)使用絕緣型
文件頁數(shù): 1/4頁
文件大?。?/td> 50K
代理商: CM100TU-24H
Sep.1998
Dimensions
Inches
Millimeters
A
4.21
107.0
B
3.54
±
0.01
4.02
90.0
±
0.25
102.0
C
D
3.15
±
0.01
80.0
±
0.25
E
0.43
11.0
F
0.91
23.0
G
0.47
12.0
H
0.85
21.7
J
0.91
23.0
Dimensions
Inches
Millimeters
K
0.15
3.75
L
0.67
17.0
M
1.91
48.5
N
0.03
0.8
P
0.32
8.1
Q
1.02
26.0
R
0.22 Dia.
5.5 Dia.
S
0.57
14.4
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of six
IGBTs in a three phase bridge
configuration, with each transistor
having a reverse-connected super-
fast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified sys-
tem assembly and thermal man-
agement.
Features:
u
Low Drive Power
u
Low V
CE(sat)
u
Discrete Super-Fast Recovery
Free-Wheel Diode
u
High Frequency Operation
u
Isolated Baseplate for Easy
Heat Sinking
Applications:
u
AC Motor Control
u
Motion/Servo Control
u
UPS
u
Welding Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM100TU-24H is a
1200V (V
CES
), 100 Ampere Six-
IGBT Module.
Current Rating
Amperes
V
CES
Volts (x 50)
Type
CM
100
24
MITSUBISHI IGBT MODULES
CM100TU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Outline Drawing and Circuit Diagram
u
w
v
T
C
Measured
Point
T
C
Measured
Point
GwN
EwN
D
C
5 - M5 NUTS
M
L
K
R 4 - Mounting
Holes
K
E
E
G
H
G
E
B
F
H
S
A
GvP
EvP
GuN
EuN
GvN
EvN
E
E
E
H
J
H
N
J
TAB#110 t=0.5
P
Q
GuP
EuP
GwP
EwP
GuP
EuP
GuN
EuN
U
P
N
GvP
EvP
GvN
EvN
V
GwP
EwP
GwN
EwN
W
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