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參數(shù)資料
| 型號： | CLY38 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | HiRel C-Band GaAs Power-MESFET |
| 中文描述： | 伊雷爾C波段砷化鎵功率場效應(yīng)管 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 581K |
| 代理商： | CLY38 |
CLY38
S emiconductor Group
2 of 10
Draft D, S eptember 99
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain-source voltage
V
DS
14
V
Drain-gate voltage
V
DG
16
V
Gate-source voltage
V
GS
- 6
V
Drain current
I
D
5.6
A
Gate forward current
I
G
32
mA
Compression Level
Operation Range 1
1)
P
C
1.5 at V
DS
≤
9 V
2.5 at V
DS
≤
8 V
3.5 at V
DS
≤
7 V
dB
Compression Level
Operation Range 2
2)
P
C
3.5 at V
DS
≤
7 V
dB
Compression Level
Operation Range 3
3)
P
C
tbd.
dB
J unction temperature
T
J
175
°
C
Storage temperature range
T
stg
- 65...+ 175
°
C
Total power dissipation
4)
P
tot
30
W
Soldering temperature
5)
T
sol
230
°C
Thermal Resistance
J unction-soldering point
R
th J S
≤
4.5
K/W
Notes.:
1) Operation Range 1: 930 mA
≤
I
D
≤
1860 mA
2) Operation Range 2: I
D
> 1860 mA
3) Operation Range 3: I
D
< 930 mA
4) At T
S
= + 40 °C. For T
S
> + 40 °C derating is required.
5) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have
elapsed.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CLY38-00 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel C-Band GaAs Power-MESFET |
| CLY38-05 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel C-Band GaAs Power-MESFET |
| CLY38-10 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel C-Band GaAs Power-MESFET |
| CL-Y-42.5X42.5 | 制造商:MALICO 功能描述:CLIP MBH42.5 3-3.6MM PK5 |
| CLY5 | 功能描述:射頻GaAs晶體管 GaAs Power MMIC RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
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