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參數(shù)資料
| 型號(hào)： | cly 2 |
| 廠商： | SIEMENS AG |
| 英文描述： | GaAs MMIC(砷化鎵微波放大器) |
| 中文描述： | 砷化鎵微波單片集成電路（砷化鎵微波放大器） |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大小： | 63K |
| 代理商： | CLY 2 |
Data Book
1
03.00
GaAs FET
Data Sheet
CLY 2
Power amplifier for mobile phones
For frequencies up to 3 GHz
Operating voltage range: 2 to 6 V
P
OUT
at
V
D
= 3 V,
f
= 1.8 GHz typ. 23.5 dBm
High efficiency better 55%
ESD:
E
lectro
s
tatic
d
ischarge sensitive device,
observe handling precautions!
Type
Marking Ordering Code
(taped)
Pin Configuration
Package
1
2
3
4
5
6
CLY 2
Y2
Q62702-L96
G
S
D
D
S
G
MW 6
Maximum Ratings
Symbol
V
DS
V
DG
V
GS
I
D
T
Ch
T
stg
P
tot
Value
Unit
Drain-source voltage
9
V
Drain-gate voltage
12
V
Gate-source voltage
– 6
V
Drain current
600
mA
Channel temperature
150
°
C
°
C
Storage temperature
– 55 … + 150
Total power dissipation (
T
S
≤
50
°
C)
1)
1)
T
S
is measured on the source lead at the soldering point to the pcb.
900
mW
Thermal Resistance
Symbol
Value
Unit
Channel-soldering point
1)
1)
T
S
is measured on the source lead at the soldering point to the pcb.
R
thChS
≤
110
K/W
MW-6
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