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參數(shù)資料
| 型號： | CLP270M |
| 廠商： | 意法半導體 |
| 英文描述： | OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE |
| 中文描述： | 過壓和過流保護的電信線路保護 |
| 文件頁數(shù)： | 16/24頁 |
| 文件大?。?/td> | 368K |
| 代理商： | CLP270M |
CLP270M
ABSOLUTE MAXIMUM RATINGS
(R
SENSE
= 4
, and T
amb
= 25 °C)
16/24
Symbol
Parameter
Test Conditions
Value
Unit
I
PP
Line to GND peak surge
current
10/1000
μ
s (open circuit voltage
wave shape 10/1000
μ
s)
100
A
5/310
μ
s (open circuit voltage
wave shape 10/700
μ
s)
150
2/10
μ
s (open circuit voltage
wave shape)
500
I
TSM
Non repetitive surge peak
on-state current (TIP or
RING versus Ground)
F = 50 Hz
tp = 20 ms
60
A
tp = 200 ms
30
A
tp = 2 s
15
A
T
stg
T
j
Storage temperature range
Maximum junction temperature
- 40 to + 150
150
°C
T
L
Maximum lead temperature for soldering during 10 s
260
°C
Symbol
Parameter
Test Conditions
Value
Typ.
Unit
Min.
Max.
10
I
LGL
Line to GND leakage
current
.
V
LG
= 240 V
.
Measured between TIP
(or RING) and GND
.
I
LG
= 1 mA
.
Measured between TIP
(or RING) and GND
.
Measured at 50 Hz between
TIPL (or RINGL) and GND
.
Refer to test circuit page 17
μ
A
V
ref
Overvoltage internal
reference
265
V
V
SWON
Line to GND voltage at
SW1 or SW2 switching-on
Line to GND current at
SW1 or SW2 switching-off
(negative current)
Line current at SW1 or
SW2 switching-on
RING to GND capacitance
TIP to GND capacitance
TIP to RING capacitance
400
V
I
SWOFF
150
mA
I
SWON
.
Positive pulse
.
Negative pulse
.
V
RINGL
= -1 V
.
V
TIPL
= -48 V
. V
GND
= 0 V
.
F = 1 MHz V
RMS
= 1V
150
190
280
320
mA
C
180
62
57
pF
ELECTRICAL CHARACTERISTICS
(R
SENSE
= 4
, and T
amb
= 25°C)
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