參數(shù)資料
型號(hào): CLH01
廠商: Toshiba Corporation
英文描述: Switching Mode Power Supply Applications
中文描述: 開(kāi)關(guān)電源的應(yīng)用
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 208K
代理商: CLH01
CLH01
2006-11-08
1
TOSHIBA High-Efficiency Rectifier Silicon Epitaxial Type
CLH01
Switching Mode Power Supply Applications
Forward voltage: V
FM
= 0.98 V (Max.)
Average forward current: I
F (AV)
= 3 A
Repetitive peak reverse voltage: V
RRM
= 200 V
Surface-mount package
L
FLAT” (Toshiba package name)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
V
RRM
200
V
Average forward current
I
F(AV)
3 (Note 1)
A
Peak one cycle surge forward current
(non-repetitive)
I
FSM
60 (50 Hz)
A
Junction temperature
T
j
40~150
°C
Storage temperature range
T
stg
40~150
°C
Note 1: T
=
132°C
Rectangular waveform : (
α
=
180°)
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
V
FM (1)
I
FM
=
0.7 A (pulse test)
0.76
V
FM (2)
I
FM
=
1.0A (pulse test)
0.78
V
Peak forward voltage
V
FM (3)
I
FM
=
3.0 A (pulse test)
0.88
0.98
Repetitive peak reverse current
I
RRM
V
RRM
=
200V (pulse test)
10
μ
A
Reverse recovery time
t
rr
I
F
=
2A, di/dt =
50 A/
μ
s
35
ns
Forward recovery time
t
fr
I
F
=
1.0 A
Device mounted on a glass-epoxy
board (board size:50mm x 50mm)
(board thickness:1.6t)
(soldering land)
Cathode:5.7mm x 6.2mm
Anode :4.5mm x 3.4mm
100
ns
Themal resistance
(junction to ambient)
R
th (j-a)
100
°C/W
Themal resistance
(junction to lead)
R
th (j-
)
5
°C/W
Unit: mm
3
.
2
.
2
CATHODE
ANODE
JEDEC
JEITA
TOSHIBA
3-4F1A
Weight: 0.15 g (typ.)
相關(guān)PDF資料
PDF描述
CLI200 OPTICAL SWITCHES
CLI210 OPTICAL SWITCHES
CLI220 OPTICAL SWITCHES
CLI230 OPTICAL SWITCHES
CLI600 Optical Switches
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CLH01(TE16L,Q) 制造商:Toshiba America Electronic Components 功能描述:ULTRA FAST RECOVERY RECTFR 200V 3A 2PIN L-FLAT - Tape and Reel 制造商:Toshiba America Electronic Components 功能描述:Semi, Discrete, Diode, Hyperfast, Rectif
CLH01(TE16R,Q) 功能描述:DIODE GEN PURP 200V 3A L-FLAT 制造商:toshiba semiconductor and storage 系列:- 包裝:帶卷(TR) 零件狀態(tài):停產(chǎn) 二極管類(lèi)型:標(biāo)準(zhǔn) 電壓 - DC 反向(Vr)(最大值):200V 電流 - 平均整流(Io):3A(DC) 不同 If 時(shí)的電壓 - 正向(Vf:0.98V @ 3A 速度:快速恢復(fù) = 200mA(Io) 反向恢復(fù)時(shí)間(trr):35ns 不同?Vr 時(shí)的電流 - 反向漏電流:10μA @ 200V 不同?Vr,F(xiàn) 時(shí)的電容:- 安裝類(lèi)型:表面貼裝 封裝/外殼:L-FLAT? 供應(yīng)商器件封裝:L-FLAT?(4x5.5) 工作溫度 - 結(jié):-40°C ~ 150°C 標(biāo)準(zhǔn)包裝:1
CLH02 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:Switching Mode Power Supply Applications
CLH02(TE16L,Q) 功能描述:DIODE GEN PURP 300V 3A L-FLAT 制造商:toshiba semiconductor and storage 系列:- 包裝:帶卷(TR) 零件狀態(tài):停產(chǎn) 二極管類(lèi)型:標(biāo)準(zhǔn) 電壓 - DC 反向(Vr)(最大值):300V 電流 - 平均整流(Io):3A(DC) 不同 If 時(shí)的電壓 - 正向(Vf:1.3V @ 3A 速度:快速恢復(fù) = 200mA(Io) 反向恢復(fù)時(shí)間(trr):35ns 不同?Vr 時(shí)的電流 - 反向漏電流:10μA @ 300V 不同?Vr,F(xiàn) 時(shí)的電容:- 安裝類(lèi)型:表面貼裝 封裝/外殼:L-FLAT? 供應(yīng)商器件封裝:L-FLAT?(4x5.5) 工作溫度 - 結(jié):-40°C ~ 150°C 標(biāo)準(zhǔn)包裝:1
CLH02(TE16R,Q) 功能描述:DIODE GEN PURP 300V 3A L-FLAT 制造商:toshiba semiconductor and storage 系列:- 包裝:帶卷(TR) 零件狀態(tài):停產(chǎn) 二極管類(lèi)型:標(biāo)準(zhǔn) 電壓 - DC 反向(Vr)(最大值):300V 電流 - 平均整流(Io):3A(DC) 不同 If 時(shí)的電壓 - 正向(Vf:1.3V @ 3A 速度:快速恢復(fù) = 200mA(Io) 反向恢復(fù)時(shí)間(trr):35ns 不同?Vr 時(shí)的電流 - 反向漏電流:10μA @ 300V 不同?Vr,F(xiàn) 時(shí)的電容:- 安裝類(lèi)型:表面貼裝 封裝/外殼:L-FLAT? 供應(yīng)商器件封裝:L-FLAT?(4x5.5) 工作溫度 - 結(jié):-40°C ~ 150°C 標(biāo)準(zhǔn)包裝:1