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參數(shù)資料
| 型號： | CIL9263 |
| 英文描述： | TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 100MA I(C) | TO-237 |
| 中文描述： | 晶體管|晶體管|叩| 250V五（巴西）總裁| 100mA的一（c）|至237 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 41K |
| 代理商： | CIL9263 |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON EPITAXIAL TRANSISTOR
CIL9263
TO237
BCE
High Voltage Transistor
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation
Operating & Storage Junction
Temperature Range
Lead Temperature for Soldering 1/16"
From Body, For 10 Seconds
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
VALUE
250
250
6.0
100
1.0
-65 to +150
UNIT
V
V
V
mA
W
deg C
TL
260
deg C
THERMAL RESISTANCE
Junction to Case
Junction to Ambient
Rth(j-c)
Rth(j-a)
50
125
deg C/W
deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
Cut off frequency
Fead Back Capacitance
SYMBOL
VCBO
VCEO
VEBO
ICBO
IEBO
hFE
VCE(Sat)
ft
Ccb
TEST CONDITION
IC=100uA, IE=0
IC=7mA, IB=0
IE=100uA, IC=0
VCB=250V, IE=0
VEB=6V, IC=0
IC=20mA,VCE=10V
IC=20mA,IB=2mA
VCE=10V, IC=20mA
VCB=20V, IE=0, f=1MHz
MIN
250
250
6.0
-
-
75
-
60
-
MAX
-
-
-
1.0
500
-
2.5
-
3.0
UNIT
V
V
V
uA
nA
V
-
pF
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 2
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| CIL928A | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:SILICON PLANAR EPITAXIAL TRANSISTORS |
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