參數(shù)資料
型號: CHA5297
廠商: United Monolithic Semiconductors
英文描述: 37-40GHz High Power Amplifier
中文描述: 37 - 40GHz的高功率放大器
文件頁數(shù): 1/4頁
文件大?。?/td> 103K
代理商: CHA5297
CHA5297
Ref. : DSCHA52972149 - 29-May-02
1/4
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
37-40GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5297 is a three-stage monolithic high
power amplifier. It is designed for a wide range
of applications, from military to commercial
communication systems. The backside of the
chip is both RF and DC grounds. This helps
simplify the assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.15μm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
Performances : 37-40GHz
28dBm output power @ 1dB comp. gain
10 dB
±
1dB gain
DC power consumption, 1.6A @ 3.5V
Chip size : 4.16 x 2.6 x 0.05 mm
Main Characteristics
Tamb. = 25°C
Symbol
Vd1 Vd2 Vg3 Vd3
Vg1 Vg2 Vd2 Vg3 Vd3
IN
OUT
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range
37
40
GHz
G
Small signal gain
10
dB
P1dB
Output power at 1dB gain compression
28
dBm
Id
Bias current
1.6
A
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
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