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參數(shù)資料
| 型號： | CGY99 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | GaAs MMIC |
| 中文描述： | 砷化鎵微波單片集成電路 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 86K |
| 代理商： | CGY99 |
CGY 99
Data Book
3
03.00
GSM-Operation
Electrical Characteristics (On GSM Application Board)
T
A
= 25
°
C,
Z
S
=
Z
L
= 50
, duty cycle 12.5%,
t
on
= 577
μ
s,
unless otherwise specified.
Parameters
Symbol
Limit Values
Unit
Test
Conditions
min.
typ.
max.
Frequency range
f
I
DD
880
–
915
MHz
–
Supply current
–
1.6
–
A
V
D
= 3.5 V,
P
in
= + 5 dBm
V
D
= 3.5 V,
P
in
= + 5 dBm
V
D
= 2.8 V,
P
in
= + 5 dBm
V
D
= 3.2 V,
P
in
= + 5 dBm
V
D
= 3.5 V,
P
in
= + 5 dBm
V
D
= 3.5 V,
P
in
= + 5 dBm
–
Power Gain
G
–
30
–
dB
Output Power
P
o
–
33.2
–
dBm
Output Power
P
o
–
34.4
–
dBm
Output Power
P
o
–
35.0
–
dBm
Overall Power
added Efficiency
PAE
–
55
–
%
Harmonics
2
f
0
3
f
0
Input VSWR
–
–
–
– 40
– 40
–
–
dBc
–
–
2 : 1
–
–
V
D
= 3.5 V or
V
D
= 4.8 V
P
in
= 5 dBm,
V
D
≤
4.6 V,
Z
S
= 50
Load mismatch
Load VSWR = 20 : 1
for all phase
–
No module damage for
10 s.
–
Stability
Load VSWR = 5 : 1
for all phase
–
All spurious output more
than 70 dB below
desired signal level
–
P
in
= 5 dBm,
V
D
= 4.6 V,
Z
S
= 50
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