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參數(shù)資料
| 型號(hào)： | CGY92 |
| 廠商： | SIEMENS A G |
| 元件分類： | 衰減器 |
| 英文描述： | GaAs MMIC (Power amplifier for GSM or AMPS application Fully integrated 2 stage amplifier) |
| 中文描述： | 900 MHz - 900 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 文件頁數(shù)： | 3/14頁 |
| 文件大?。?/td> | 159K |
| 代理商： | CGY92 |
GaAs MMIC
CGY92
_____________________________________________________________________________________________________
Siemens Aktiengesellschaft
HL EH PD 21
pg. 3/14
17.10.95
Electrical characteristics
(TA= 25°C , f=0.9 GHz, ZS=ZL=50 Ohm, VD=3.0V, VG=-4V, VTR pin connected to
ground, unless otherwise specified, pulsed with a duty cycle of 10%, ton=0.33ms)
Characteristics
Supply current
Pin=10dBm
Negative supply current
(normal operation)
Shut-off current
VTR n.c.
Negative supply current
(shut off mode, VTR pin n.c.)
Small signal gain
Pin = -5dBm
Power gain
VD=3V; Pin=10dBm
Output Power
VD=3V; Pin=10dBm
Output Power
VD=3.6V; Pin=10dBm
Output Power
VD=5V; Pin=10dBm
Overall Power added Efficiency
VD=3V; Pin=10dBm
Overall Power added Efficiency
VD=3.6V; Pin=10dBm
Overall Power added Efficiency
VD=5V; Pin =10dBm
Harmonics
(Pin=10dBm)
2f
0
VD=3V; (Pout=32dBm)
3f
0
Harmonics
(Pin=10dBm)
2f
0
VD=5V; (Pout=35dBm)
3f
0
Input VSWR
VD=3.0V;
Third order intercept point
VD=3V; pulsed with a duty cycle of 10%;
f
1
=900.00MHz; f
2
=900.20MHz;
Third order intercept point
VD=4.8V; pulsed with a duty cycle of 10%;
f
1
=900.00MHz; f
2
=900.20MHz;
Symbol
IDD
min
-
typ
1.05
max
-
Unit
A
IG
-
2
-
mA
ID
-
400
-
μA
IG
-
10
-
μA
G
27.0
29.0
-
dB
G
21.0
21.8
-
dB
Po
31.0
31.8
-
dBm
Po
32.3
33.1
-
dBm
Po
34.0
35.0
-
dBm
η
43
48
-
%
η
41
46
-
%
η
40
45
-
%
-
-
-
-
-
-
-
-
-
-
-46
-37
-48
-38
-
-
-
-
dBc
dBc
dBc
dBc
-
1.7 : 1
2.0 : 1
IP
3
-
40
-
dBm
IP
3
-
45
-
dBm
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