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參數(shù)資料
| 型號： | CGY41 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | HiRel L- and S-Band GaAs General Purpose Amplifier |
| 中文描述： | 伊雷爾L -和S波段砷化鎵通用放大器 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 555K |
| 代理商： | CGY41 |
CGY41
Semiconductor Group
2 of 7
Target DATASHEET
Maximum ratings
Symbol
Value
Unit
Drain-voltage
V
D
V
G
5.5
V
Gate-voltage
-4 ... 0
V
Drain-gate voltage
RF Input power
1)
V
DG
P
RF
IN
T
Ch
T
stg
P
tot
9.5
V
16
dBm
Channel temperature
175
°C
Storage temperature range
-55...+175
°C
Total power dissipation (T
S
< 82°C)
2)
440
mW
Thermal resistance
Channel-soldering point
2)
R
thChS
155
K/W
Notes:
Exceeding any of the max. ratings may cause permanent damage to the device. Appropriate
handling is required to protect the electrostatic sensitive MMIC against degradation due to excess
voltage or current spikes. Proper ground connection of leads 2 and 4 ( with min. inductance ) is required
to achieve the guaranteed RF performance, stable operating conditions and adequate cooling.
1) @ V
D
> 4.5 V derating required.
2) Ts is measured on the source lead at the soldering point to the PCB.
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