- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378445 > CGY21 (SIEMENS A G) GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier) PDF資料下載
參數(shù)資料
| 型號： | CGY21 |
| 廠商： | SIEMENS A G |
| 元件分類： | 衰減器 |
| 英文描述： | GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier) |
| 中文描述： | 100 MHz - 900 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | HERMETICALLY SEALED, TO-12, 4 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 130K |
| 代理商： | CGY21 |
Semiconductor Group
3
CGY 21
Electrical Characteristics
at
T
A
= 25 C,
V
S
= 4.5 V,
R
S
=
R
L
= 50
, unless otherwise specified,
(for application circuit see next page).
Unit
Values
typ.
160
21
Parameter
Symbol
min.
–
19
max.
200
–
mA
dB
Operating current
Power gain
f
= 100 MHz to 900 MHz
Gain flatness
f
= 100 MHz to 900 MHz
I
op
Noise figure
f
= 100 MHz to 900 MHz
Input return loss
f
= 100 MHz to 900 MHz
Output return loss
f
= 100 MHz to 900 MHz
F
–
3.9
5.5
G
G
–
1.5
2
1 dB gain compression
f
= 100 MHz to 900 MHz
P
1dB
–
19
–
dBm
Third order intercept point
two-tone intermodulation test
f
1
= 806 MHz,
f
2
= 810 MHz,
P
o
= 10 dBm (both carriers)
IP
3
31
32.5
–
RL
IN
–
12
9.5
RL
OUT
–
12
9.5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CGY2100HL | Transimpedance Amplifier |
| CGY2100UH | Transimpedance Amplifier |
| CGY31 | GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier All-gold metallization Chip fully passivated) |
| CGY353 | GaAs MMIC |
| CGY40 | GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Application range: 100 MHz to 3 GHz) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CGY2100HL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Transimpedance Amplifier |
| CGY2100UH | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Transimpedance Amplifier |
| CGY2105 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:High dynamic range dual LNA MMIC |
| CGY2105ATS | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:High dynamic range dual LNA MMIC |
| CGY2106TS | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:High dynamic range dual LNA MMIC |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。