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參數(shù)資料
| 型號： | CGY196 |
| 廠商： | SIEMENS A G |
| 元件分類： | 衰減器 |
| 英文描述： | GaAs MMIC (Broadband Power Amplifier [ 800..3500 Mhz ] DECT,PHS,PCS,GSM,AMPS,WLAN,WLL Single Voltage Supply) |
| 中文描述： | 800 MHz - 3500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 文件頁數(shù)： | 3/15頁 |
| 文件大?。?/td> | 192K |
| 代理商： | CGY196 |
CGY 196
Siemens Aktiengesellschaft
Semiconductor Group
3
3
16.6.1998
HL HF PE GaAs
Permissible Total Power Dissipation in DC Operation
75
0
200
400
600
800
1000
1200
1400
1600
0
25
50
75
100
125
150
Temperature of soldering point, Ts °C
P
tot DC
= f (T
s
)
mW
Determination of Permissible Total Power Dissipation for Continuous and Pulse
Operation
The dissipated power is the power which remains in the chip and heats the device. It does
not contain RF signals which are coupled out consistently.
a) Continuous Wave / DC Operation
For the determination of the permissible total power dissipation
P
tot-DC
from the diagram
below it is necessary to obtain the temperature of the soldering point T
S
first. There are two
cases:
When R
thSA
(soldering point to ambient) is not known: Measure T
S
with a temperature
sensor at the leads were the heat is transferred from the device to the board ( normally at
the widest source or ground lead for GaAs ). Use a small sensor of low heat transport,
for example a thermoelement ( < 1mm ) with thin wires or a temperature indicating paper
while the device is operating.
When R
thSA
is already known:
T
S
= P
diss
x R
thSA
+ T
A
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