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參數(shù)資料
| 型號(hào)： | CGY180 |
| 廠商： | SIEMENS A G |
| 元件分類： | 衰減器 |
| 英文描述： | GaAs MMIC (Power amplifier for DECT and PCS application Fully integrated 3 stage amplifier Operating voltage range: 2.7 to 6 V) |
| 中文描述： | RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 文件頁數(shù)： | 4/15頁 |
| 文件大?。?/td> | 278K |
| 代理商： | CGY180 |
GaAs MMIC
CGY 180
_________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 4/15
21.02.96
HL EH PD 21
Electrical characteristics
(TA = 25°C , f=1.89 GHz, ZS=ZL=50 Ohm, VD=3.0V, VG=-4V, VTR pin connected to
ground, unless otherwise specified)
Characteristics
Symbol
min
typ
max
Unit
Supply current
Pin = 0 dBm
Negative supply current
(transmit operation)
Shut-off current
VTR n.c.
Negative supply current
(shut off mode, VTR pin n.c.)
Gain
Pin = -20dBm
Output Power
Pin = 0 dBm
Output Power
VD=5V; Pin = 0 dBm
Overall Power added Efficiency
Pin = 0 dBm
Harmonics
(Pin =0dBm)
2f
0
VD=3V; (Pout =27dBm)
3f
0
Harmonics
(Pin =0dBm)
2f
0
VD=5V; (Pout =30dBm)
Input VSWR V
D=3V;
Third order intercept point
VD=3V; pulsed with a duty cycle of 10%;
f
1
=1.8900GHz; f
2
=1.891728GHz;
Third order intercept point
VD=4.8V; pulsed with a duty cycle of 10%;
f
1
=1.8900GHz; f
2
=1.891728GHz;
Load mismatch
Pin=0dBm, VD
≤
6V, Z
S
=50 Ohm,
Load VSWR = 20:1 for all phase,
VTR=0V, VG=-4V
IDD
-
450
-
mA
IG
-
1
2.5
mA
ID
-
50
180
μA
IG
-
10
50
μA
G
28
30
-
dB
Po
25.5
27
-
dBm
Po
-
30
-
dBm
η
30
35
-
%
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-28
-25
-25
-22
2.5 : 1
dBc
3f
0
dBc
2 : 1
-
IP
3
-
33.5
-
dBm
IP
3
-
38.5
-
dBm
-
No module damage
for 10 sec.
-
Stability
Pin=0dBm, VD=2-7V, Z
S
=50 Ohm,
Load VSWR = 3:1 for all phase,
VTR=0V, VG=-4V
-
All spurious output
more than 60 dB below
desired signal level
-
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