參數(shù)資料
型號: cgy 59w
廠商: SIEMENS AG
英文描述: GaAs MMIC(砷化鎵微波放大器)
中文描述: 砷化鎵微波單片集成電路(砷化鎵微波放大器)
文件頁數(shù): 1/9頁
文件大?。?/td> 58K
代理商: CGY 59W
Data Book
1
03.00
GaAs MMIC
Data Sheet
CGY 59W
Low noise preamplifier for mobile communication
(PCN, DECT, GSM) in 2.7 V to 6 V systems
Biased monolithic microwave IC (MMIC)
Easily matchable to 50 W
No bias coil needed
Single positive supply voltage
Low noise figure and high gain
NF = 1.3 dB,
G
= 16.5 dB @ 3 V, 950 MHz (typ.)
NF = 1.7 dB,
G
= 12 dB @ 3 V, 1.85 GHz (typ.)
Low power consumption
Frequency range 200 MHz … 2.5 GHz
Miniature package P-SOT363-6-1
ESD:
E
lectro
s
tatic
d
ischarge sensitive device,
observe handling precautions!
Type
Marking
Ordering Code
(taped)
Package
CGY 59W
Y5s
Q62702 - G69
P-SOT363-6-1
Maximum Ratings
Symbol
V
D
T
Ch
T
stg
P
tot
Value
Unit
Drain voltage
8
V
Channel temperature
150
°
C
°
C
Storage temperature range
– 55 … + 150
Total power dissipation (
T
S
t.b.d.
°
C)
1)
1)
Please care for sufficient heat dissipation on the pcb!
80
mW
Thermal Resistance
Symbol
Value
Unit
Channel-soldering point (GND)
R
thChS
R
thJA
t.b.d.
K/W
Junction-ambient
1)
1)
Package mounted on alumina 15 mm
×
16.7 mm
×
0.7 mm.
< t.b.d.
K/W
SOT 363
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