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參數(shù)資料
| 型號： | CGD987HCI |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率放大器 |
| 英文描述： | Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies. |
| 封裝： | CGD987HCI<SOT115J|<<<1<Always Pb-free,; |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 93K |
| 代理商： | CGD987HCI |
CGD987HCI
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 29 June 2011
2 of 9
NXP Semiconductors
CGD987HCI
1 GHz, 27 dB gain GaAs high output power doubler
2.
Pinning information
3.
Ordering information
4.
Limiting values
[1]
The ESD pulse of 2000 V corresponds to a class 2 sensitivity level.
Table 2.
Pinning
Pin
Description
Simplified outline
Graphic symbol
1
input
2, 3
common
5+VB
7, 8
common
9output
9
13 57
23 78
5
9
1
sym095
Table 3.
Ordering information
Type number
Package
Name
Description
Version
CGD987HCI
-
rectangular single-ended package; aluminium flange;
2 vertical mounting holes; 2
6-32 UNC and 2 extra
horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min Max
Unit
VB
supply voltage
-
30
V
Vi(RF)
RF input voltage
single tone
-
75
dBmV
VESD
electrostatic discharge voltage
Human Body Model (HBM);
According JEDEC standard
22-A114E
[1] -
2000 V
Biased; According
IEC61000-4-2
-
1500 V
Tstg
storage temperature
40 +100 C
Tmb
mounting base temperature
20 +100 C
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