參數資料
型號： CGD987HCI
廠商： NXP SEMICONDUCTORS
元件分類： 放大器
英文描述： 1 GHz, 27 dB gain GaAs high output power doubler
中文描述： 40 MHz - 1003 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封裝： ROHS COMPLIANT, SOT-115J, 7 PIN
文件頁數： 3/9頁
文件大?。?/td> 93K
代理商： CGD987HCI
CGD987HCI
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 29 June 2011
3 of 9
NXP Semiconductors
CGD987HCI
1 GHz, 27 dB gain GaAs high output power doubler
5.
Characteristics
[1]
Gp at 1003 MHz minus Gp at 40 MHz.
[2]
Flatness is defined as peak deviation to straight line.
[3]
Direct Current (DC).
Table 5.
Characteristics
Bandwidth 40 MHz to 1003 MHz; VB = 24 V (DC); ZS = ZL = 75 ; Tmb =35 C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
f = 50 MHz
-
25.5
-
dB
f = 870 MHz
-
26.5
-
dB
f = 1003 MHz
26
27
28
dB
SLsl
slope straight line
f = 40 MHz to 1003 MHz
[1] 0.7
-
2.2
dB
FL
flatness of frequency response
f = 40 MHz to 1003 MHz
1
dB
RLin
input return loss
f = 40 MHz to 160 MHz
20
-
dB
f = 160 MHz to 320 MHz
19
-
dB
f = 320 MHz to 640 MHz
18
-
dB
f = 640 MHz to 870 MHz
17
-
dB
f = 870 MHz to 1003 MHz
16
-
dB
RLout
output return loss
f = 40 MHz to 160 MHz
20
-
dB
f = 160 MHz to 320 MHz
18
-
dB
f = 320 MHz to 640 MHz
17
-
dB
f = 640 MHz to 870 MHz
16
-
dB
f = 870 MHz to 1003 MHz
16
-
dB
NF
noise figure
f = 50 MHz
-
4.5
5.5
dB
f = 1003 MHz
-
5
6
dB
Itot
total current
[3] -440
460
mA
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相關代理商/技術參數
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