3236 Scott Boulevard
Santa Clara, California 95054
Phone: (408) 986-5060
Fax: (408) 986-5095
CGB7005-SC (-BD)
Features
Low Operating Voltage: 5V
32.5 dBm Output IP3 @ 850 MHz
3.2 dB Noise Figure @ 850 MHz
21.0 dB Gain @ 850 MHz
17.6 dBm P1dB @ 850 MHz
Low Performance Variation Over Temperature
Low Cost: Die Form or SOT-89 Package
100% DC On-Wafer Testing
ESD Protection on All Die: >1000V HBM
Low Thermal Resistance: <85°C/Watt
Applications
PA Driver Amp, IF Amp, LO Buffer Amp
Cellular, PCS, GSM, UMTS
Wireless Data and SATCOM
Transmit and Receive Functions
Description
The CGB7005-SC (-BD) is a Darlington Configured,
high dynamic range, utility gain block amplifier. Designed for
applications operating within the 0.1 GHz to 6.0 GHz frequency
range, Celeritek’s broadband, cascadable, gain block amplifiers
are ideal solutions for transmit, receive and IF applications.
These MMIC amplifiers are available in bare die form or
an industry standard SOT-89 package. The CGB7005-SC (-BD)
is fabricated in Celeritek’s in-house foundry. Celeritek’s InGaP
HBT technology and an industry low thermal resistance offers
a thermally robust and reliable gain block solution.
The InGaP HBT die have extra pads to enable thor-
ough DC testing. This unique test capability and the inclusion
of ESD protection on all die, significantly enhances the quali-
ty, reliability and ruggedness of these products.
With a single bypass capacitor, optional RF choke
and two DC blocking capacitors, this gain block amplifier
offers significant ease of use in a broad range of applications.
0.1 GHz to 6.0 GHz
InGaP HBT, MMIC or Packaged,
Matched Gain Block Amplifier
Advanced Product Information
June 2004 V1.0
(1 of 7)
Functional Block Diagram (SOT-89)
Absolute Maximum Ratings Operation of this device above any of these parameters may cause damage.
Parameter
Rating
Parameter
Rating
Parameter
Rating
Max Device Voltage
+6.0 V
RF Input Power
+17 dBm
Operating Temperature
-40°C to +85°C
Max Device Current
130 mA
Storage Temperature
-55°C to +150°C
Thermal Resistance
85°C/W
Max Device Dissipated Pwr
0.65 W
Junction Temperature 150°C
ESD (HBM)
1000 V
Electrical Characteristics
Unless otherwise specified, the following specifications are guaranteed at room temperature in a Celeritek test fixture.
Notes: 1. Test Conditions in Celeritek eval board, Vs = 5 V, Id = 63 mA Typ., Rbias = 15
, Zs = Zl = 50, OIP3 tone spacing = 1 MHz, Pout per tone = 3 dBm.
2. Values reflect performance in recommended application circuit.
850 MHz
1950 MHz
2400 MHz
3500 MHz
Parameter
Temperature (°C)
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Small Signal Gain
+25
20.0
21.0
22.0
17.2
18.2
19.2
15.7
16.9
18.1
15.5
dB
-40 to +85
19.7
21.0
22.3
16.9
18.2
19.5
15.4
16.9
18.4
dB
Output P1dB
+25
16.6
17.6
16.2
17.2
15.6
16.6
14.3
dBm
-40 to +85
16.3
17.6
15.9
17.2
15.3
16.6
dBm
Output IP3
+25
31.0
32.5
29.0
30.5
28.0
29.5
27.0
dBm
-40 to +85
30.5
32.0
28.5
30.5
27.5
29.5
dBm
Noise Figure
+25
3.2
4.0
3.2
4.0
3.3
4.1
3.3
dB
-40 to +85
3.2
4.3
3.2
4.3
3.3
4.4
dB
Operating Current
+25
59
63
67
59
63
67
59
63
67
63
mA
-40 to +85
54
63
73
54
63
73
54
63
73
mA
Input Return Loss
+25
14
19
14
18
13
17.5
14.5
dB
-40 to +85
13
19
13
18
12
17.5
dB
Output Return Loss
+25
15
22
13.5
17.5
16
20
17
dB
-40 to +85
14
22
12.5
17.5
15
20
dB
Pout @ -45 dBc ACP,
+25
11
dBm
IS-95, 9 Forward Channels
-40 to +85
11
dBm
Input
Ground Output
Bias
Ground
1
2
3
4