參數(shù)資料
型號(hào): CGB240
廠商: TRIQUINT SEMICONDUCTOR INC
元件分類: 衰減器
英文描述: 2-Stage Bluetooth InGaP HBT Power Amplifier
中文描述: 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
封裝: MSOP-10
文件頁數(shù): 1/14頁
文件大?。?/td> 320K
代理商: CGB240
CGB 240
Datasheet
Description:
The CGB240 GaAs Power Amplifier MMIC has been
especially developed for wireless applications in the
2.4 - 2.5 GHz ISM band (e.g. Bluetooth class 1). Its
high power added efficiency and single positive sup-
ply operation makes the device ideally suited to
handheld applications. The device delivers 23 dBm
output power at a supply voltage of 3.2 V, with an
overall
PAE
of 50%. The output power can be ad-
justed using an analog control voltage (
V
CTR
). Simple
external input-, interstage-, and output matching cir-
cuits are used to adapt to the different requirements
of linearity and harmonic suppression in various ap-
plications.
For WLAN applications (IEEE802.11b) or appli-
cations serving both WLAN and Bluetooth, we
recommend to use the CGB240B device.
Features:
Single voltage supply.
Wide operating voltage range 2.0 - 5.5 V.
P
OUT
= 23 dBm at
V
C
= 3.2 V.
Overall power added efficiency (PAE
)
typi-
cally 50%.
High
PAE
at low–power mode.
Analog power control with four power
steps.
Straight-Forward Matching; Few external
components.
Applications:
Bluetooth Class 1
Cordless Phones
Home RF
2-Stage Bluetooth InGaP HBT Power Amplifier
Package Outline:
1
5
TS
MSOP-10
Pin Configuration:
1 & 2:
3:
4, 5, & 10:
6:
7:
8 & 9:
11 (Paddle): GND
Vc1
RF In
NC
Vcntrl1
Vcntrl2
Vc2
For further information please visit
www.triquint.com
Rev. 1.6 October 20th, 2004
pg. 2/13
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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