參數(shù)資料
型號(hào): cfy 35
廠商: SIEMENS AG
英文描述: GaAs FET(N溝道砷化稼場(chǎng)效應(yīng)管)
中文描述: 砷化鎵場(chǎng)效應(yīng)管(不適用溝道砷化稼場(chǎng)效應(yīng)管)
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 37K
代理商: CFY 35
Data Book
1
03.00
GaAs FET
Data Sheet
CFY 35
Low noise
High gain
For low-noise front end amplifiers
For DBS down converters
ESD:
E
lectro
s
tatic
d
ischarge sensitive device, ob-
serve handling precautions!
Type
Marking Ordering Code
(tape and reel)
Pin Configuration
Package
1)
1)
Dimensions see
Page 5
.
1
2
3
4
CFY 35-20
NA
Q62702-F1393
S
D
S
G
MW-4
CFY 35-23
NB
Q62702-F1394
Maximum Ratings
Symbol
Value
Unit
Drain-source voltage
V
DS
V
DG
V
GS
I
D
T
Ch
T
stg
P
tot
5
V
Drain-gate voltage
6
V
Gate-source voltage
– 4 … 0
V
Drain current
60
mA
Channel temperature
150
°
C
°
C
Storage temperature range
– 40 … + 150
Total power dissipation (
T
S
53
°
C)
1)
1)
T
S
is measured on the source 1 lead at the soldering point to the PCB.
250
mW
Thermal Resistance
Symbol
Value
Unit
Channel-soldering point
1)
1)
T
S
is measured on the source 1 lead at the soldering point to the PCB.
R
thChS
540
K/W
MW-4
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