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參數(shù)資料
| 型號： | CFD1499 |
| 廠商： | Continental Device India Limited |
| 英文描述： | NPN SILICON PLANAR POWER TRANSISTOR |
| 中文描述： | NPN硅平面功率晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 110K |
| 代理商： | CFD1499 |
NPN SILICON PLANAR POWER TRANSISTOR
CFD1499
TO-220FP Fully Isolated
Plastic Package
Complementary CFB1063
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
RMS Isolation Voltage (for 1sec, R.H.
<30%, T
a
= 25
o
C)
Collector Current Peak
Collector Current
Collector Power Dissipation @T
a
=25
o
C
@T
c
=25
o
C
Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
** V
ISOL
(a)
(b)
I
CP
I
C
P
C
T
j
T
stg
** RMS Isolation Voltage: (a) 3500 V
RMS
with Package in Clip Mounting Position (b) 1500 V
RMS
with Package
in Screw Mounting Position (for 1sec, R.H.<30%, T
a
=25
o
C; Pulse Test: Pulse Width <300
m
s, Duty Cycle<2%)
ELECTRICAL CHARACTERISTICS (T
c
=25oC unless otherwise specified)
DESCRIPTION
Collector Cut Off Current
Emitter Cut Off Current
DC Current Gain
SYMBOL
I
CBO
I
EBO
h
FE
*h
FE
h
FE
V
CE(sat)
V
BE(on)
f
T
TEST CONDITION
V
CB
=100V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=5V, I
C
=20mA
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=3A
I
C
=3A, I
B
= 0.3A
V
CE
=5V, I
C
=3A
V
CE
= 5V, I
C
= 0.5A,
f=1MHz
V
CB
= 10V, f=1MHz
MIN
TYP
MAX
50
50
UNIT
μ
A
μ
A
20
60
20
200
Collector Emitter Saturation Voltage
Base Emitter On Voltage
Transition Frequency
2.0
1.8
V
V
20
MHz
Collector Output Capacitance
C
ob
90
pF
*h
FE
Classification
Q : 60 - 120
P : 100 - 200
W
oC
oC
A
W
150
5.0
2.0
40
- 55 to 150
100
100
5.0
3500
1500
8.0
VALUE
V
V
RMS
V
RMS
A
UNIT
V
V
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
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