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參數(shù)資料
| 型號： | CFC3944Q |
| 廠商： | Continental Device India Limited |
| 英文描述： | NPN SILICON PLANAR POWER TRANSISTORS |
| 中文描述： | NPN硅平面功率晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 111K |
| 代理商： | CFC3944Q |
NPN SILICON PLANAR POWER TRANSISTORS CFC3944, CFC3944A
TO-220FP Fully Isolated
Plastic Package
Complementary CFA1535, CFA1535A
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
RMS Isolation Voltage (for 1sec, R.H.
<30%, T
a
= 25
o
C)
Collector Current Peak
Collector Current
Collector Power Dissipation @T
c
=25
o
C
@T
a
=25
o
C
Junction Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
** V
ISOL
(a)
(b)
I
CP
I
C
P
C
Tj
T
stg
Storage Temperature Range
** RMS Isolation Voltage: (a) 3500 V
RMS
with Package in Clip Mounting Position (b) 1500 V
RMS
with Package
in Screw Mounting Position (for 1sec, R.H.<30%, T
a
=25
o
C; Pulse Test: Pulse Width <300
m
s, Duty Cycle<2%)
ELECTRICAL CHARACTERISTICS (T
C
=25oC unless specified otherwise)
DESCRIPTION
Collector Cut Off Current
SYMBOL
I
CBO
TEST CONDITION
V
CB
=150V,
CFC3994
V
CB
=180V,
CFC3994A
I
C
=1mA, I
B
=0
CFC3944
CFC3944A
I
E
=10
μ
A, I
C
=0
V
CE
=10V, I
C
=150mA
V
CE
=5V, I
C
=500mA
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
V
CE
=10V, I
C
= 50mA,f=1MHz
V
CB
= 10V, I
E
=0, f=1MHz
MIN
TYP
MAX
10
10
UNIT
μ
A
μ
A
Collector Emitter Voltage
V
CEO
150
180
5
95
50
V
V
V
Emitter Base Voltage
DC Current Gain
V
EBO
*h
FE
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
220
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
2
2
V
V
200
MHz
pF
50
*h
FE
Classification
Q : 95 - 155
R : 130 - 220
A
A
CFC3944 CFC3944A
150 180
150 180
5.0
3500
W
W
UNIT
V
V
V
V
RMS
V
RMS
1500
1.5
1.0
15
2.0
oC
150
- 55 to +150
o
C
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
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