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參數(shù)資料
| 型號： | CF739 |
| 廠商： | SIEMENS A G |
| 元件分類： | 小信號晶體管 |
| 英文描述： | GaAs FET (N-channel dual-gate GaAs MES FET) |
| 中文描述： | L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 138K |
| 代理商： | CF739 |
Semiconductor Group
1
04.96
GaAs FET
CF 739
Features
G
N-channel dual-gate GaAs MES FET
G
Depletion mode transistor for tuned small-signal
applications up to 2 GHz, e. g. VHF, UHF,
Sat-TV tuners
G
Low noise
G
High gain
G
Low input capacitance
ESD: E
lectro
s
tatic
d
ischarge sensitive device, observe handling precautions!
Maximum Ratings
1
S
2
D
3
G
2
4
G
1
Type
Ordering Code
(tape and reel)
Q62702-F1215
Marking
Package
1)
Pin Configuration
CF 739
MS
SOT-143
Parameter
Drain-source voltage
Gate 1-source voltage
Symbol
Values
10
6
Unit
V
V
DS
–
V
G1S
Drain current
Gate 1-source peak current
Gate 2-source peak current
I
D
+
I
G1SM
+
I
G2SM
80
1
1
mA
Gate 2-source voltage
–
V
G2S
6
Channel temperature
Storage temperature range
T
ch
150
– 55 … + 150
C
Total power dissipation,
T
S
≤
66 C
2)
P
tot
240
mW
T
stg
Thermal Resistance
Channel - soldering point
3)
R
thchS
≤
350
K/W
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on alumina 15 mm
×
16.7 mm
×
0.7 mm.
3)
T
S
is measured on the source lead at the soldering point to the pcb.
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