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參數(shù)資料
| 型號(hào)： | CEG9926 |
| 廠商： | Chino-Excel Technology Corp. |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 雙N溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 56K |
| 代理商： | CEG9926 |
20
Dual N-Channel Enhancement Mode Field Effect Transistor
Nov. 2002
FEATURES
20V , 4.5A , R
DS(ON)
=30m
R
DS(ON)
=40m
@V
GS
=4.5V.
@V
GS
=2.5V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
TSSOP-8 for Surface Mount Package.
ABSOLUTE MAXIMUM RATINGS (T
A
=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
8
V
Drain Current-Continuous
-Pulsed
I
D
4.5
25
1.7
A
A
A
W
I
DM
Drain-Source Diode Forward Current
I
S
Maximum Power Dissipation
P
D
Operating Junction and Storage
Temperature Range
T
J
, T
STG
-55 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
R
JA
125
/W
C
CEG9926
a
a
a
a
b
9-17
D
1
S
1
S
1
G
1
1
2
4
3
8
7
5
6
D
2
S
2
S
2
G
2
D
1
TSSOP-8
G
2
D
2
S
1
G
1
S
2
S
2
S
1
9
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