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參數(shù)資料
| 型號(hào)： | CEF09N6 |
| 廠商： | Chino-Excel Technology Corp. |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強(qiáng)模式的邏輯電平場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 45K |
| 代理商： | CEF09N6 |
600
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
600V , 6A ,R
DS(ON)
= 1.2
@V
GS
=10V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handling capability.
TO-220F full-pak for through hole.
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
30
V
-Pulsed
I
D
15
A
I
DM
5
A
Drain-Source Diode Forward Current
I
S
5
A
Maximum Power Dissipation
P
D
W
W/ C
Operating and Storage Temperature Range
T
J
, T
STG
-55 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
JC
R
JA
2.6
65
/W
C
/W
C
@Tc=25 C
Derate above 25 C
50
0.38
Drain Current-Continuous
S
G
D
6-127
Jul. 2002
TO-220F
S
D
G
CEF09N6
6
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CEF09N7A | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEF09N7G | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEF10N4 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| CEF10N6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:600V N Channel MOS |
| CEF1165 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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