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參數(shù)資料
| 型號： | CED9926 |
| 英文描述： | 20V N Channel MOS |
| 中文描述： | 20V的?頻道馬鞍山 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 57K |
| 代理商： | CED9926 |
20
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor
PRELIMINARY
FEATURES
20V , 26A , R
DS(ON)
=30m
R
DS(ON)
=40m
@V
GS
=4.5V.
@V
GS
=2.5V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handling capability.
TO-251 & TO-252 package.
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
12
V
Drain Current-Continuous
-Pulsed
I
D
26
A
I
DM
78
A
Drain-Source Diode Forward Current
I
S
26
A
Maximum Power Dissipation
P
D
W
W/ C
Operating and Storage Temperature Range
T
J
, T
STG
-55 to 175
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
JC
R
JA
4
50
/W
C
/W
C
CED9926/CEU9926
@Tc=25 C
Derate above 25 C
38
0.25
S
G
D
CEU SERIES
TO-252AA(D-PAK)
CED SERIES
TO-251(l-PAK)
G
G
S
S
D
D
6
6-82
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