- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384188 > CEB10N6 600V N Channel MOS PDF資料下載
參數(shù)資料
| 型號(hào)： | CEB10N6 |
| 英文描述： | 600V N Channel MOS |
| 中文描述： | 600V的?頻道馬鞍山 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 42K |
| 代理商： | CEB10N6 |
450
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
450V , 10A , R
DS(ON)
=700m
V
GS
=10V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handling capability.
TO-220 & TO-263 package.
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
30
V
-Pulsed
I
D
10
A
I
DM
40
A
Drain-Source Diode Forward Current
I
S
10
A
Maximum Power Dissipation
P
D
W
W/ C
Operating and Storage Temperature Range
T
J
, T
STG
-55 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
JC
R
JA
1.0
62
/W
C
/W
C
CEP10N4/CEB10N4
@Tc=25 C
Derate above 25 C
125
1.0
Drain Current-Continuous
S
G
D
CEB SERIES
TO-263(DD-PAK)
CEP SERIES
TO-220
G
S
S
D
D
G
Sep. 2002
4
4-57
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CED4060AL | 60V N Channel MOS |
| CEU4060AL | 60V N Channel MOS |
| CED4060A | 60V N Channel MOS |
| CEU4060A | 60V N Channel MOS |
| CED6030L | 30V N Channel MOS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CEB10P10 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| CEB1165 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEB1175 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEB1195 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEB12N5 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。